中国物理B ›› 2021, Vol. 30 ›› Issue (1): 17302-.doi: 10.1088/1674-1056/abc546

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  • 收稿日期:2020-09-22 修回日期:2020-10-15 接受日期:2020-10-28 出版日期:2020-12-17 发布日期:2020-12-30

Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga2O3 substrate

Xu-Long Chu(褚旭龙)1,4, Zeng Liu(刘增)1,8, Yu-Song Zhi(支钰崧)1, Yuan-Yuan Liu(刘媛媛)2,3, Shao-Hui Zhang(张少辉)5,7, Chao Wu(吴超)6, Ang Gao(高昂)1, Pei-Gang Li(李培刚)1,†, Dao-You Guo(郭道友)6, Zhen-Ping Wu(吴真平)1, and Wei-Hua Tang(唐为华)1,8,9,‡   

  1. 1 Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China; 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; 3 The Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 4 China Aerospace System Simulation Technology Co., Ltd. (Beijing), Beijing 100195, China; 5 Division of Interdisciplinary and Comprehensive Research & Platform for Characterization and Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China; 6 Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China; 7 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China; 8 College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210046, China; 9 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
  • Received:2020-09-22 Revised:2020-10-15 Accepted:2020-10-28 Online:2020-12-17 Published:2020-12-30
  • Contact: †Corresponding author. E-mail: pgli@bupt.edu.cn ‡Corresponding author. E-mail: whtang@bupt.edu.cn
  • Supported by:
    Project supported by BUPT Excellent Ph.D. Students Foundation (Grant No. CX2020314), the National Natural Science Foundation of China (Grant Nos. 61774019, 51572033, and 51572241), the Fund of State Key Laboratory of Information Photonics and Optical Communications (BUPT), and the Fundamental Research Funds for the Central Universities, China.

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Abstract: We report the edge-defined-film-fed (EFG)-grown β-Ga2O3-based Schottky photodiodes. The device has a reverse leakage current of ∼nA and a rectified ratio of ∼104 at \(\mathrm\pm 5\) V. In addition, the photodiode detector shows a dark current of 0.3 pA, a photo-responsivity (R) of 2.875 mA/W, a special detectivity (D*) of 1010 Jones, and an external quantum efficiency (EQE) of 1.4% at zero bias, illustrating a self-powered operation. This work may advance the development of the Ga2O3-based Schottky diode solar-blind photodetectors.

Key words: β-Ga2O3 substrate, Schottky photodiode, solar-blind detection

中图分类号:  (Surface double layers, Schottky barriers, and work functions)

  • 73.30.+y
85.25.Oj (Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)) 85.60.Dw (Photodiodes; phototransistors; photoresistors)