Simulation study of high voltage GaN MISFETs with embedded PN junction

doi:10.1088/1674-1056/ab90f7

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 80701-080701.doi: 10.1088/1674-1056/ab90f7

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

Simulation study of high voltage GaN MISFETs with embedded PN junction

Xin-Xing Fei(费新星), Ying Wang(王颖), Xin Luo(罗昕), Cheng-Hao Yu(于成浩)

1 College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China;
2 Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

收稿日期:2020-02-24 修回日期:2020-04-23 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Ying Wang E-mail:wangying7711@yahoo.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61774052) and the Excellent Youth Foundation of Zhejiang Province, China (Grant No. LR17F040001).

Simulation study of high voltage GaN MISFETs with embedded PN junction

Xin-Xing Fei(费新星)¹, Ying Wang(王颖)², Xin Luo(罗昕)¹, Cheng-Hao Yu(于成浩)²

1 College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China;
2 Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

Received:2020-02-24 Revised:2020-04-23 Online:2020-08-05 Published:2020-08-05
Contact: Ying Wang E-mail:wangying7711@yahoo.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61774052) and the Excellent Youth Foundation of Zhejiang Province, China (Grant No. LR17F040001).

摘要/Abstract

摘要：

In this paper, we propose a new enhanced GaN MISFET with embedded pn junction, i.e., EJ-MISFET, to enhance the breakdown voltage. The embedded pn junction is used to improve the simulated device electric field distribution between gate and drain, thus achieving an enhanced breakdown voltage (BV). The proposed simulated device with L_GD=15 μm presents an excellent breakdown voltage of 2050 V, which is attributed to the improvement of the device electric field distribution between gate and drain. In addition, the ON-resistance (R_ON) of 15.37 Ω·mm and Baliga's figure of merit of 2.734 GW·cm^-2 are achieved in the optimized EJ-MISFET. Compared with the field plate conventional GaN MISFET (FPC-MISFET) without embedded pn junction structure, the proposed simulated device increases the BV by 32.54% and the Baliga's figure of merit is enhanced by 71.3%.

关键词: TCAD, Baliga's figure of merit (BFOM), breakdown voltage (BV)

Abstract:

Key words: TCAD, Baliga's figure of merit (BFOM), breakdown voltage (BV)

中图分类号: (Computer modeling and simulation)

07.05.Tp

94.20.Ss (Electric fields; current system) 51.50.+v (Electrical properties) 84.30.Jc (Power electronics; power supply circuits)

费新星, 王颖, 罗昕, 于成浩. Simulation study of high voltage GaN MISFETs with embedded PN junction[J]. 中国物理B, 2020, 29(8): 80701-080701.

Xin-Xing Fei(费新星), Ying Wang(王颖), Xin Luo(罗昕), Cheng-Hao Yu(于成浩). Simulation study of high voltage GaN MISFETs with embedded PN junction[J]. Chin. Phys. B, 2020, 29(8): 80701-080701.

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Simulation study of high voltage GaN MISFETs with embedded PN junction

Simulation study of high voltage GaN MISFETs with embedded PN junction

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