中国物理B ›› 2020, Vol. 29 ›› Issue (7): 76103-076103.doi: 10.1088/1674-1056/ab8abc

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

Qing Liao(廖庆), Bingsheng Li(李炳生), Long Kang(康龙), Xiaogang Li(李小刚)   

  1. 1 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
    2 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  • 收稿日期:2020-01-12 修回日期:2020-04-07 出版日期:2020-07-05 发布日期:2020-07-05
  • 通讯作者: Bingsheng Li E-mail:libingshengmvpmvp@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. U1832133) and the Doctor Research Foundation of Southwest University of Science and Technology, China (Grant No. 18zx7141).

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

Qing Liao(廖庆)1, Bingsheng Li(李炳生)1, Long Kang(康龙)2, Xiaogang Li(李小刚)2   

  1. 1 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
    2 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  • Received:2020-01-12 Revised:2020-04-07 Online:2020-07-05 Published:2020-07-05
  • Contact: Bingsheng Li E-mail:libingshengmvpmvp@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. U1832133) and the Doctor Research Foundation of Southwest University of Science and Technology, China (Grant No. 18zx7141).

摘要: The formation of cavities in silicon carbide is vitally useful to “smart-cut” and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 ℃ followed by annealing at 1500 ℃ are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 ℃. The possible reasons are discussed.

关键词: He implantation, cavities, extended defects, transmission electron microscopy, recrystallization

Abstract: The formation of cavities in silicon carbide is vitally useful to “smart-cut” and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 ℃ followed by annealing at 1500 ℃ are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 ℃. The possible reasons are discussed.

Key words: He implantation, cavities, extended defects, transmission electron microscopy, recrystallization

中图分类号:  (Physical radiation effects, radiation damage)

  • 61.80.-x
61.80.Jh (Ion radiation effects) 68.37.Lp (Transmission electron microscopy (TEM)) 78.40.Fy (Semiconductors)