Amorphous Si critical dimension structures with direct Si lattice calibration

doi:10.1088/1674-1056/28/3/030601

中国物理B ›› 2019, Vol. 28 ›› Issue (3): 30601-030601.doi: 10.1088/1674-1056/28/3/030601

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Amorphous Si critical dimension structures with direct Si lattice calibration

Ziruo Wu(吴子若), Yanni Cai(蔡燕妮), Xingrui Wang(王星睿), Longfei Zhang(张龙飞), Xiao Deng(邓晓), Xinbin Cheng(程鑫彬), Tongbao Li(李同保)

1 School of Physics Science and Engineering, Tongji University, Shanghai 200092, China;
2 School of Aerospace Engineering and Applied Mechanics, Tongji University, Shanghai 200092, China

收稿日期:2018-11-05 修回日期:2018-12-20 出版日期:2019-03-05 发布日期:2019-03-05
通讯作者: Xiao Deng E-mail:1110490dengxiao@tongji.edu.cn
基金资助:
Project supported by the National Key Scientific Instrument and Equipment Development Projects of China (Grant No. 2014YQ090709), the National Key Research and Development Program of China (Grant No. 2016YFA0200902), and Major Projects of Science and Technology Commission of Shanghai, China (Grant No. 17JC1400800).

Amorphous Si critical dimension structures with direct Si lattice calibration

Ziruo Wu(吴子若)¹, Yanni Cai(蔡燕妮)¹, Xingrui Wang(王星睿)¹, Longfei Zhang(张龙飞)¹, Xiao Deng(邓晓)², Xinbin Cheng(程鑫彬)¹, Tongbao Li(李同保)¹

1 School of Physics Science and Engineering, Tongji University, Shanghai 200092, China;
2 School of Aerospace Engineering and Applied Mechanics, Tongji University, Shanghai 200092, China

Received:2018-11-05 Revised:2018-12-20 Online:2019-03-05 Published:2019-03-05
Contact: Xiao Deng E-mail:1110490dengxiao@tongji.edu.cn
Supported by:
Project supported by the National Key Scientific Instrument and Equipment Development Projects of China (Grant No. 2014YQ090709), the National Key Research and Development Program of China (Grant No. 2016YFA0200902), and Major Projects of Science and Technology Commission of Shanghai, China (Grant No. 17JC1400800).

摘要/Abstract

摘要：

Developing highly accurate critical dimension standards is a significant task for nanoscale metrology. In this paper, we put forward an alternative approach to fabricate amorphous Si critical dimension structures with direct Si lattice calibration in the same frame scanning transmission electron microscopy image. Based on the traceable measurement analysis, the optimized method can provide the same calibration accuracy and increase the fabrication throughput and lower the cost simultaneously, which benefits the application needs in atomic force microscopy (AFM) tip geometry characterization, benchmarking measurement tools, and conducting comparison measurements between different approaches.

关键词: critical dimension, Si lattice, transmission electron microscopy, tip characterizer

Abstract:

Key words: critical dimension, Si lattice, transmission electron microscopy, tip characterizer

中图分类号: (Metrology)

06.20.-f

06.20.fb (Standards and calibration) 68.37.Lp (Transmission electron microscopy (TEM))

吴子若, 蔡燕妮, 王星睿, 张龙飞, 邓晓, 程鑫彬, 李同保. Amorphous Si critical dimension structures with direct Si lattice calibration[J]. 中国物理B, 2019, 28(3): 30601-030601.

Ziruo Wu(吴子若), Yanni Cai(蔡燕妮), Xingrui Wang(王星睿), Longfei Zhang(张龙飞), Xiao Deng(邓晓), Xinbin Cheng(程鑫彬), Tongbao Li(李同保). Amorphous Si critical dimension structures with direct Si lattice calibration[J]. Chin. Phys. B, 2019, 28(3): 30601-030601.

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Amorphous Si critical dimension structures with direct Si lattice calibration

Amorphous Si critical dimension structures with direct Si lattice calibration

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