中国物理B ›› 2020, Vol. 29 ›› Issue (6): 67403-067403.doi: 10.1088/1674-1056/ab8a37

所属专题: SPECIAL TOPIC — Topological 2D materials

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Effect of graphene grain boundaries on MoS2/graphene heterostructures

Yue Zhang(张悦), Xiangzhe Zhang(张祥喆), Chuyun Deng(邓楚芸), Qi Ge(葛奇), Junjie Huang(黄俊杰), Jie Lu(卢捷), Gaoxiang Lin(林高翔), Zekai Weng(翁泽锴), Xueao Zhang(张学骜), Weiwei Cai(蔡伟伟)   

  1. 1 College of Physical Science and Technology, Xiamen University, Xiamen 361005, China;
    2 College of Arts and Science, National University of Defense Technology, Changsha 410073, China;
    3 Chongqing 2D Materials Institute, Chongqing 400714, China
  • 收稿日期:2019-12-15 修回日期:2020-04-13 出版日期:2020-06-05 发布日期:2020-06-05
  • 通讯作者: Xueao Zhang, Weiwei Cai E-mail:xazhang@xmu.edu.cn;wwcai@xmu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11874423).

Effect of graphene grain boundaries on MoS2/graphene heterostructures

Yue Zhang(张悦)1, Xiangzhe Zhang(张祥喆)2, Chuyun Deng(邓楚芸)2, Qi Ge(葛奇)3, Junjie Huang(黄俊杰)1, Jie Lu(卢捷)1, Gaoxiang Lin(林高翔)1, Zekai Weng(翁泽锴)1, Xueao Zhang(张学骜)1,3, Weiwei Cai(蔡伟伟)1,3   

  1. 1 College of Physical Science and Technology, Xiamen University, Xiamen 361005, China;
    2 College of Arts and Science, National University of Defense Technology, Changsha 410073, China;
    3 Chongqing 2D Materials Institute, Chongqing 400714, China
  • Received:2019-12-15 Revised:2020-04-13 Online:2020-06-05 Published:2020-06-05
  • Contact: Xueao Zhang, Weiwei Cai E-mail:xazhang@xmu.edu.cn;wwcai@xmu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11874423).

摘要: The grain boundaries of graphene are disordered topological defects, which would strongly affect the physical and chemical properties of graphene. In this paper, the spectral characteristics and photoresponse of MoS2/graphene heterostructures are studied. It is found that the blueshift of the G and 2D peaks of graphene in Raman spectrum is due to doping. The lattice mismatch at the graphene boundaries results in a blueshift of MoS2 features in the photoluminescence spectra, comparing to the MoS2 grown on SiO2. In addition, the photocurrent signal in MoS2/hexagonal single-crystal graphene heterostructures is successfully captured without bias, but not in MoS2/polycrystalline graphene heterostructures. The electron scattering at graphene grain boundaries affects the optical response of MoS2/graphene heterostructures. The photoresponse of the device is attributed to the optical absorption and response of MoS2 and the high carrier mobility of graphene. These findings offer a new approach to develop optoelectronic devices based on two-dimensional material heterostructures.

关键词: photoresponse, heterostructures, grain-boundary

Abstract: The grain boundaries of graphene are disordered topological defects, which would strongly affect the physical and chemical properties of graphene. In this paper, the spectral characteristics and photoresponse of MoS2/graphene heterostructures are studied. It is found that the blueshift of the G and 2D peaks of graphene in Raman spectrum is due to doping. The lattice mismatch at the graphene boundaries results in a blueshift of MoS2 features in the photoluminescence spectra, comparing to the MoS2 grown on SiO2. In addition, the photocurrent signal in MoS2/hexagonal single-crystal graphene heterostructures is successfully captured without bias, but not in MoS2/polycrystalline graphene heterostructures. The electron scattering at graphene grain boundaries affects the optical response of MoS2/graphene heterostructures. The photoresponse of the device is attributed to the optical absorption and response of MoS2 and the high carrier mobility of graphene. These findings offer a new approach to develop optoelectronic devices based on two-dimensional material heterostructures.

Key words: photoresponse, heterostructures, grain-boundary

中图分类号:  (Optical properties)

  • 74.25.Gz
78.20.Jq (Electro-optical effects) 42.70.Gi (Light-sensitive materials)