Interfacial defect engineering and photocatalysis properties of hBN/MX2 (M = Mo, W, and X = S, Se heterostructures

doi:10.1088/1674-1056/ac43b2

中国物理B ›› 2022, Vol. 31 ›› Issue (6): 67101-067101.doi: 10.1088/1674-1056/ac43b2

Interfacial defect engineering and photocatalysis properties of hBN/MX₂ (M = Mo, W, and X = S, Se heterostructures

Zhi-Hai Sun(孙志海), Jia-Xi Liu(刘佳溪), Ying Zhang(张颖), Zi-Yuan Li(李子源), Le-Yu Peng(彭乐宇), Peng-Ru Huang(黄鹏儒)^†, Yong-Jin Zou(邹勇进), Fen Xu(徐芬), and Li-Xian Sun(孙立贤)^‡

School of Material Science and Engineering, Guilin University of Electronic Technology, Guangxi Key Laboratory of Information Materials, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, Guilin 541004, China

收稿日期:2021-10-18 修回日期:2021-12-08 接受日期:2021-12-16 出版日期:2022-05-17 发布日期:2022-06-06
通讯作者: Peng-Ru Huang, Li-Xian Sun E-mail:pengruhuang@guet.edu.cn;sunlx@guet.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFB3802400), the National Natural Science Foundation of China (Grant Nos. 52161037, U20A20237, 51871065, and 51971068), the Scientific Research and Technology Development Program of Guangxi Zhuang Autonmous Region Province, China (Grant Nos. AD19110037, AA19182014, AD17195073, and AA17202030-1), the Guangxi Natural Science Foundation, China (Grant Nos. 2017JJB150085 and 2019GXNSFGA245005), the Innovation Project of GUET Graduate Education, China (Grant No. 2022YCXS197), the Guangxi Bagui Scholar Foundation, Guangxi Collaborative Innovation Centre of Structure and Property for New Energy and Materials, Guangxi Advanced Functional Materials Foundation and Application Talents Small Highlands, ChinesischDeutsche Kooperationsgruppe, China (Grant No. GZ1528), and the Guangxi Key Laboratory of Information Material, China (Grant No. 201025-Z).

Interfacial defect engineering and photocatalysis properties of hBN/MX₂ (M = Mo, W, and X = S, Se heterostructures

School of Material Science and Engineering, Guilin University of Electronic Technology, Guangxi Key Laboratory of Information Materials, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, Guilin 541004, China

Received:2021-10-18 Revised:2021-12-08 Accepted:2021-12-16 Online:2022-05-17 Published:2022-06-06
Contact: Peng-Ru Huang, Li-Xian Sun E-mail:pengruhuang@guet.edu.cn;sunlx@guet.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFB3802400), the National Natural Science Foundation of China (Grant Nos. 52161037, U20A20237, 51871065, and 51971068), the Scientific Research and Technology Development Program of Guangxi Zhuang Autonmous Region Province, China (Grant Nos. AD19110037, AA19182014, AD17195073, and AA17202030-1), the Guangxi Natural Science Foundation, China (Grant Nos. 2017JJB150085 and 2019GXNSFGA245005), the Innovation Project of GUET Graduate Education, China (Grant No. 2022YCXS197), the Guangxi Bagui Scholar Foundation, Guangxi Collaborative Innovation Centre of Structure and Property for New Energy and Materials, Guangxi Advanced Functional Materials Foundation and Application Talents Small Highlands, ChinesischDeutsche Kooperationsgruppe, China (Grant No. GZ1528), and the Guangxi Key Laboratory of Information Material, China (Grant No. 201025-Z).

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摘要/Abstract

摘要： Van der Waals (VDW) heterostructures have attracted significant research interest due to their tunable interfacial properties and potential applications in many areas such as electronics, optoelectronic, and heterocatalysis. In this work, the influences of interfacial defects on the electronic structures and photocatalytic properties of hBN/MX₂ (M = Mo, W, and X=S, Se) are studied using density functional theory calculations. The results reveal that the band alignment of hBN/MX₂ can be adjusted by introducing vacancies and atomic doping. The type-I band alignment of the host structure is maintained in the heterostructure with n-type doping in the hBN sublayer. Interestingly, the band alignment changed into the type-II heterostructrue due to V_B defect and p-type doping is introduced into the hBN sublayer. This can conduce to the separation of photo-generated electron-hole pairs at the interfaces, which is highly desired for heterostructure photocatalysis. In addition, two Z-type heterostructures including hBN(Be_B)/MoS₂, hBN(Be_B)/MoSe₂, and hBN(V_N)/MoSe₂ are achieved, showing the decreasing of band gap and ideal redox potential for water splitting. Our results reveal the possibility of engineering the interfacial and photocatalysis properties of hBN/MX₂ heterostructures via interfacial defects.

关键词: hBN/MX₂ heterostructures, interfacial defect, electronic state, photocatalytic properties

Abstract: Van der Waals (VDW) heterostructures have attracted significant research interest due to their tunable interfacial properties and potential applications in many areas such as electronics, optoelectronic, and heterocatalysis. In this work, the influences of interfacial defects on the electronic structures and photocatalytic properties of hBN/MX₂ (M = Mo, W, and X=S, Se) are studied using density functional theory calculations. The results reveal that the band alignment of hBN/MX₂ can be adjusted by introducing vacancies and atomic doping. The type-I band alignment of the host structure is maintained in the heterostructure with n-type doping in the hBN sublayer. Interestingly, the band alignment changed into the type-II heterostructrue due to V_B defect and p-type doping is introduced into the hBN sublayer. This can conduce to the separation of photo-generated electron-hole pairs at the interfaces, which is highly desired for heterostructure photocatalysis. In addition, two Z-type heterostructures including hBN(Be_B)/MoS₂, hBN(Be_B)/MoSe₂, and hBN(V_N)/MoSe₂ are achieved, showing the decreasing of band gap and ideal redox potential for water splitting. Our results reveal the possibility of engineering the interfacial and photocatalysis properties of hBN/MX₂ heterostructures via interfacial defects.

Key words: hBN/MX₂ heterostructures, interfacial defect, electronic state, photocatalytic properties

中图分类号: (Density functional theory, local density approximation, gradient and other corrections)

71.15.Mb

73.20.At (Surface states, band structure, electron density of states) 74.78.Fk (Multilayers, superlattices, heterostructures) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

Zhi-Hai Sun(孙志海), Jia-Xi Liu(刘佳溪), Ying Zhang(张颖), Zi-Yuan Li(李子源), Le-Yu Peng(彭乐宇), Peng-Ru Huang(黄鹏儒), Yong-Jin Zou(邹勇进), Fen Xu(徐芬), and Li-Xian Sun(孙立贤). Interfacial defect engineering and photocatalysis properties of hBN/MX₂ (M = Mo, W, and X = S, Se heterostructures[J]. 中国物理B, 2022, 31(6): 67101-067101.

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Interfacial defect engineering and photocatalysis properties of hBN/MX₂ (M = Mo, W, and X = S, Se heterostructures

Interfacial defect engineering and photocatalysis properties of hBN/MX₂ (M = Mo, W, and X = S, Se heterostructures

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