High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

doi:10.1088/1674-1056/28/1/014208

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 14208-014208.doi: 10.1088/1674-1056/28/1/014208

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-08-27 修回日期:2018-12-12 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Yu Zhang, Zhi-Chuan Niu E-mail:zhangyu@semi.ac.cn;zcniu@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

Sheng-Wen Xie(谢圣文)^1,2, Yu Zhang(张宇)^1,2, Cheng-Ao Yang(杨成奥)^1,2, Shu-Shan Huang(黄书山)^1,2, Ye Yuan(袁野)^1,2, Yi Zhang(张一)^1,2, Jin-Ming Shang(尚金铭)^1,2, Fu-Hui Shao(邵福会)^1,2, Ying-Qiang Xu(徐应强)^1,2, Hai-Qiao Ni(倪海桥)^1,2, Zhi-Chuan Niu(牛智川)^1,2

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-08-27 Revised:2018-12-12 Online:2019-01-05 Published:2019-01-05
Contact: Yu Zhang, Zhi-Chuan Niu E-mail:zhangyu@semi.ac.cn;zcniu@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61790580 and 61435012), the National Basic Research Program of China (Grant No. 2014CB643903), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YJKYYQ20170032).

摘要/Abstract

摘要：

InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb barriers of the lasers are grown with digital alloy techniques consisting of binary AlSb/AlAs/GaSb short-period pairs. Peak power conversion efficiency of 26% and an efficiency higher than 16% at 1 W are achieved at continuous-wave operation for a 2-mm-long and 100-μm-wide stripe laser. The maximum output power of a single emitter reaches to 1.4 W at 7 A. 19-emitter bars with maximum efficiency higher than 20% and maximum power of 16 W are fabricated. Lasers with the short-period-pair barriers are proved to have improved temperature properties and wavelength stabilities. The characteristic temperature (T₀) is up to 140℃ near room temperature (25-55℃).

关键词: mid-infrared laser diode, digital alloys, characteristic temperature, bars

Abstract:

Key words: mid-infrared laser diode, digital alloys, characteristic temperature, bars

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

78.55.Cr (III-V semiconductors) 78.67.De (Quantum wells) 42.60.Pk (Continuous operation)

谢圣文, 张宇, 杨成奥, 黄书山, 袁野, 张一, 尚金铭, 邵福会, 徐应强, 倪海桥, 牛智川. High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars[J]. 中国物理B, 2019, 28(1): 14208-014208.

Sheng-Wen Xie(谢圣文), Yu Zhang(张宇), Cheng-Ao Yang(杨成奥), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Yi Zhang(张一), Jin-Ming Shang(尚金铭), Fu-Hui Shao(邵福会), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川). High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars[J]. Chin. Phys. B, 2019, 28(1): 14208-014208.

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High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars

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