中国物理B ›› 2018, Vol. 27 ›› Issue (8): 87304-087304.doi: 10.1088/1674-1056/27/8/087304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection

Xin Ye(叶鑫), Xiao-Chuan Xia(夏晓川), Hong-Wei Liang(梁红伟), Zhuo Li(李卓), He-Qiu Zhang(张贺秋), Guo-Tong Du(杜国同), Xing-Zhu Cui(崔兴柱), Xiao-Hua Liang(梁晓华)   

  1. 1 School of Microelectronics, Dalian University of Technology, Dalian 116024, China;
    2 School of Physics, Dalian University of Technology, Dalian 116024, China;
    3 Institute of High Energy Physics, Chinese Academy of Sciences(CAS), Beijing 100049, China;
    4 State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2018-04-12 修回日期:2018-05-16 出版日期:2018-08-05 发布日期:2018-08-05
  • 通讯作者: Hong-Wei Liang E-mail:hwliang@dlut.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11675198, 61574026, and 11405017), the National Key Research and Development Program of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), the Natural Science Foundation of Liaoning Province of China (Grant Nos. 201602453 and 201602176), and the China Postdoctoral Science Foundation (Grant No. 2016M591434).

Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection

Xin Ye(叶鑫)2, Xiao-Chuan Xia(夏晓川)1, Hong-Wei Liang(梁红伟)1, Zhuo Li(李卓)2, He-Qiu Zhang(张贺秋)1, Guo-Tong Du(杜国同)2, Xing-Zhu Cui(崔兴柱)3, Xiao-Hua Liang(梁晓华)3,4   

  1. 1 School of Microelectronics, Dalian University of Technology, Dalian 116024, China;
    2 School of Physics, Dalian University of Technology, Dalian 116024, China;
    3 Institute of High Energy Physics, Chinese Academy of Sciences(CAS), Beijing 100049, China;
    4 State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • Received:2018-04-12 Revised:2018-05-16 Online:2018-08-05 Published:2018-08-05
  • Contact: Hong-Wei Liang E-mail:hwliang@dlut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11675198, 61574026, and 11405017), the National Key Research and Development Program of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), the Natural Science Foundation of Liaoning Province of China (Grant Nos. 201602453 and 201602176), and the China Postdoctoral Science Foundation (Grant No. 2016M591434).

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摘要： Au/Ni/n-type 4H-SiC Schottky alpha particle detectors are fabricated and annealed at temperatures between 400℃ and 700℃ to investigate the effects of thermal stability of the Schottky contact on the structural and electrical properties of the detectors. At the annealing temperature of 500℃, the two nickel silicides (i.e., Ni31Si12 and Ni2Si) are formed at the interface and result in the formation of an inhomogeneous Schottky barrier. By increasing the annealing temperature, the Ni31Si12 transforms into the more stable Ni2Si. The structural evolution of the Schottky contact directly affects the electrical properties and alpha particle energy resolutions of the detectors. A better energy resolution of 2.60% is obtained for 5.48-MeV alpha particles with the detector after being annealed at 600℃. As a result, the Au/Ni/n-type 4H-SiC Schottky detector shows a good performance after thermal treatment at temperatures up to 700℃.

关键词: alpha particle detector, silicon carbide, thermal stability, Schottky barrier

Abstract: Au/Ni/n-type 4H-SiC Schottky alpha particle detectors are fabricated and annealed at temperatures between 400℃ and 700℃ to investigate the effects of thermal stability of the Schottky contact on the structural and electrical properties of the detectors. At the annealing temperature of 500℃, the two nickel silicides (i.e., Ni31Si12 and Ni2Si) are formed at the interface and result in the formation of an inhomogeneous Schottky barrier. By increasing the annealing temperature, the Ni31Si12 transforms into the more stable Ni2Si. The structural evolution of the Schottky contact directly affects the electrical properties and alpha particle energy resolutions of the detectors. A better energy resolution of 2.60% is obtained for 5.48-MeV alpha particles with the detector after being annealed at 600℃. As a result, the Au/Ni/n-type 4H-SiC Schottky detector shows a good performance after thermal treatment at temperatures up to 700℃.

Key words: alpha particle detector, silicon carbide, thermal stability, Schottky barrier

中图分类号:  (Metal-semiconductor-metal structures)

  • 73.40.Sx
73.30.+y (Surface double layers, Schottky barriers, and work functions) 29.40.Wk (Solid-state detectors) 29.30.Ep (Charged-particle spectroscopy)