Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

doi:10.1088/1674-1056/27/4/048504

中国物理B ›› 2018, Vol. 27 ›› Issue (4): 48504-048504.doi: 10.1088/1674-1056/27/4/048504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯)

1. School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;
2. Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China

收稿日期:2017-11-02 修回日期:2018-01-18 出版日期:2018-04-05 发布日期:2018-04-05
通讯作者: Zhi-Nong Yu E-mail:znyu@bit.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61675024) and the National Basic Research Program of China (Grant No. 2014CB643600).

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

Xu-Yang Li(栗旭阳)¹, Zhi-Nong Yu(喻志农)¹, Jin Cheng(程锦)¹, Yong-Hua Chen(陈永华)¹, Jian-She Xue(薛建设)², Jian Guo(郭建)^1,2, Wei Xue(薛唯)¹

1. School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;
2. Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China

Received:2017-11-02 Revised:2018-01-18 Online:2018-04-05 Published:2018-04-05
Contact: Zhi-Nong Yu E-mail:znyu@bit.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61675024) and the National Basic Research Program of China (Grant No. 2014CB643600).

摘要/Abstract

摘要： In this study, indium oxide (In₂O₃) thin-film transistors (TFTs) are fabricated by two kinds of low temperature solution-processed technologies (T_a ≤ 300℃), i.e., water-based (DIW-based) process and alkoxide-based (2-ME-based) process. The thickness values, crystallization properties, chemical structures, surface roughness values, and optical properties of In₂O₃ thin-films and the electrical characteristics of In₂O₃ TFTs are studied at different annealing temperatures. Thermal annealing at higher temperature leads to an increase in the saturation mobility (μ_sat) and a negative shift in the threshold voltage (V_TH). The DIW-based processed In₂O₃-TFT annealed at 300℃ exhibits excellent device performance, and one annealed at 200℃ exhibits an acceptable μ_sat of 0.86 cm²/V·s comparable to that of a-Si:H TFTs, whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μ_sat of 1.65 cm²/Vs and one annealed at 200℃ is inactive. The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature. The DIW-based process for fabricating the In₂O₃ TFT opens the way for the development of nontoxic, low-cost, and low-temperature oxide electronics.

关键词: water-based process, alkoxide-based process, annealing temperature, thin-film transistors

Abstract: In this study, indium oxide (In₂O₃) thin-film transistors (TFTs) are fabricated by two kinds of low temperature solution-processed technologies (T_a ≤ 300℃), i.e., water-based (DIW-based) process and alkoxide-based (2-ME-based) process. The thickness values, crystallization properties, chemical structures, surface roughness values, and optical properties of In₂O₃ thin-films and the electrical characteristics of In₂O₃ TFTs are studied at different annealing temperatures. Thermal annealing at higher temperature leads to an increase in the saturation mobility (μ_sat) and a negative shift in the threshold voltage (V_TH). The DIW-based processed In₂O₃-TFT annealed at 300℃ exhibits excellent device performance, and one annealed at 200℃ exhibits an acceptable μ_sat of 0.86 cm²/V·s comparable to that of a-Si:H TFTs, whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μ_sat of 1.65 cm²/Vs and one annealed at 200℃ is inactive. The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature. The DIW-based process for fabricating the In₂O₃ TFT opens the way for the development of nontoxic, low-cost, and low-temperature oxide electronics.

Key words: water-based process, alkoxide-based process, annealing temperature, thin-film transistors

中图分类号: (Field effect devices)

85.30.Tv

78.40.Fy (Semiconductors) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)

栗旭阳, 喻志农, 程锦, 陈永华, 薛建设, 郭建, 薛唯. Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures[J]. 中国物理B, 2018, 27(4): 48504-048504.

Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯). Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures[J]. Chin. Phys. B, 2018, 27(4): 48504-048504.

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Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures

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