Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

doi:10.1088/1674-1056/27/12/128502

中国物理B ›› 2018, Vol. 27 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/27/12/128502

所属专题： SPECIAL TOPIC — Photodetector: Materials, physics, and applications

• SPECIAL TOPIC—Photodetector: materials, physics, and applications • 上一篇下一篇

Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

Siqi Hu(胡思奇), Ruijuan Tian(田睿娟), Xiaoguang Luo(罗小光), Rui Yin(殷瑞), Yingchun Cheng(程迎春), Jianlin Zhao(赵建林), Xiaomu Wang(王肖沐), Xuetao Gan(甘雪涛)

1 MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical Univeristy, Xi'an 710072, China;
2 Shannxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China;
3 School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

收稿日期:2018-09-20 修回日期:2018-09-30 出版日期:2018-12-05 发布日期:2018-12-05
通讯作者: Xuetao Gan E-mail:xuetaogan@nwpu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0307200 and 2017YFA0303800), the National Natural Science Foundations of China (Grant Nos. 61522507 and 61775183), the Key Research and Development Program in Shaanxi Province of China (Grant No. 2017KJXX-12), and the Fundamental Research Funds for the Central Universities (Grant Nos. 3102017jc01001 and 3102018jcc034).

Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

Siqi Hu(胡思奇)¹, Ruijuan Tian(田睿娟)¹, Xiaoguang Luo(罗小光)², Rui Yin(殷瑞)¹, Yingchun Cheng(程迎春)², Jianlin Zhao(赵建林)¹, Xiaomu Wang(王肖沐)³, Xuetao Gan(甘雪涛)¹

1 MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical Univeristy, Xi'an 710072, China;
2 Shannxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China;
3 School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

Received:2018-09-20 Revised:2018-09-30 Online:2018-12-05 Published:2018-12-05
Contact: Xuetao Gan E-mail:xuetaogan@nwpu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0307200 and 2017YFA0303800), the National Natural Science Foundations of China (Grant Nos. 61522507 and 61775183), the Key Research and Development Program in Shaanxi Province of China (Grant No. 2017KJXX-12), and the Fundamental Research Funds for the Central Universities (Grant Nos. 3102017jc01001 and 3102018jcc034).

摘要/Abstract

摘要：

We demonstrate a reconfigurable black phosphorus electrical field transistor, which is van der Waals heterostructured with few-layer graphene and hexagonal boron nitride flakes. Varied homojunctions could be realized by controlling both source-drain and top-gate voltages. With the spatially resolved scanning photocurrent microscopy technique, photovoltaic photocurrents originated from the band-bending regions are observed, confirming nine different configurations for each set of fixed voltages. In addition, as a phototransistor, high responsivity (~800 mA/W) and fast response speed (~230 μs) are obtained from the device. The reconfigurable van der Waals heterostructured transistors may offer a promising structure towards electrically tunable black phosphorus-based optoelectronic devices.

关键词: black phosphorus, reconfigurable heterostructure, photovoltaic effect, photocurrent

Abstract:

Key words: black phosphorus, reconfigurable heterostructure, photovoltaic effect, photocurrent

中图分类号: (Junction diodes)

85.30.Kk

85.60.Bt (Optoelectronic device characterization, design, and modeling) 85.60.Dw (Photodiodes; phototransistors; photoresistors)

胡思奇, 田睿娟, 罗小光, 殷瑞, 程迎春, 赵建林, 王肖沐, 甘雪涛. Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors[J]. 中国物理B, 2018, 27(12): 128502-128502.

Siqi Hu(胡思奇), Ruijuan Tian(田睿娟), Xiaoguang Luo(罗小光), Rui Yin(殷瑞), Yingchun Cheng(程迎春), Jianlin Zhao(赵建林), Xiaomu Wang(王肖沐), Xuetao Gan(甘雪涛). Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors[J]. Chin. Phys. B, 2018, 27(12): 128502-128502.

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Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

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