Studying the charge carrier properties in CuInS2 films via femtosecond transient absorption and nanosecond transient photocurrents

doi:10.1088/1674-1056/28/5/056106

中国物理B ›› 2019, Vol. 28 ›› Issue (5): 56106-056106.doi: 10.1088/1674-1056/28/5/056106

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents

Mingrui Tan(谭铭瑞), Qinghui Liu(刘庆辉), Ning Sui(隋宁), Zhihui Kang(康智慧), Liquan Zhang(张里荃), Hanzhuang Zhang(张汉壮), Wenquan Wang(王文全), Qiang Zhou(周强), Yinghui Wang(王英惠)

1 Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, China;
2 State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China

收稿日期:2018-11-01 修回日期:2019-03-20 出版日期:2019-05-05 发布日期:2019-05-05
通讯作者: Liquan Zhang, Hanzhuang Zhang E-mail:zhanglq@jlu.edu.cn;zhanghz@jlu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 21573094, 51502109, 11774122, 11574112, and 11474131), the National Found for Fostering Talents of Basic Science, China (Grant No. J1103202), and the China Scholarship Council (CSC) obtained during the visit of Ning Sui to MPIA (Grant No. 201706175038).

Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents

Mingrui Tan(谭铭瑞)¹, Qinghui Liu(刘庆辉)¹, Ning Sui(隋宁)¹, Zhihui Kang(康智慧)¹, Liquan Zhang(张里荃)¹, Hanzhuang Zhang(张汉壮)¹, Wenquan Wang(王文全)¹, Qiang Zhou(周强)², Yinghui Wang(王英惠)¹

1 Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, China;
2 State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China

Received:2018-11-01 Revised:2019-03-20 Online:2019-05-05 Published:2019-05-05
Contact: Liquan Zhang, Hanzhuang Zhang E-mail:zhanglq@jlu.edu.cn;zhanghz@jlu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 21573094, 51502109, 11774122, 11574112, and 11474131), the National Found for Fostering Talents of Basic Science, China (Grant No. J1103202), and the China Scholarship Council (CSC) obtained during the visit of Ning Sui to MPIA (Grant No. 201706175038).

摘要/Abstract

摘要：

The carrier behavior in CuInS₂ thin films at femtosecond and microsecond time scales is discussed in detail. Transient absorption data suggests that the photo-generated carriers relax rapidly accompanied by a change in energy. The photo-generated charge carriers are extracted by a bias electric field E in the nanosecond transient photocurrent system. An applied E improves the efficiency of photon conversion to charge carriers and enhances the velocity of the extracted charge carriers. In addition, there exists a threshold of illumination intensity in the extraction process of charge carriers in the CuInS₂ thin film, above which carrier recombination occurs. The corresponding loss further increases with illumination intensity and the recombination rate is almost independent of E. Our results provide useful insights into the characteristics of carriers in the CuInS₂ thin film and are important for the operation of optoelectronic devices realized with these films.

关键词: semiconductor film, carrier dynamics, transient absorption, transient photocurrent

Abstract:

Key words: semiconductor film, carrier dynamics, transient absorption, transient photocurrent

中图分类号: (Semiconductors)

61.82.Fk

68.35.bg (Semiconductors) 73.50.Gr (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)

谭铭瑞, 刘庆辉, 隋宁, 康智慧, 张里荃, 张汉壮, 王文全, 周强, 王英惠. Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents[J]. 中国物理B, 2019, 28(5): 56106-056106.

Mingrui Tan(谭铭瑞), Qinghui Liu(刘庆辉), Ning Sui(隋宁), Zhihui Kang(康智慧), Liquan Zhang(张里荃), Hanzhuang Zhang(张汉壮), Wenquan Wang(王文全), Qiang Zhou(周强), Yinghui Wang(王英惠). Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents[J]. Chin. Phys. B, 2019, 28(5): 56106-056106.

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Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents

Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents

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