Black phosphorus-based field effect transistor devices for Ag ions detection

doi:10.1088/1674-1056/27/8/087308

中国物理B ›› 2018, Vol. 27 ›› Issue (8): 87308-087308.doi: 10.1088/1674-1056/27/8/087308

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Black phosphorus-based field effect transistor devices for Ag ions detection

Hui-De Wang(王慧德), David K Sang, Zhi-Nan Guo(郭志男), Rui Cao(曹睿), Jin-Lai Zhao(赵劲来), Muhammad Najeeb Ullah Shah, Tao-Jian Fan(范涛健), Dian-Yuan Fan(范滇元), Han Zhang(张晗)

1 Shenzhen Key Laboratory of Two-Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
2 Faculty of Information Technology, Macau University of Science and Technology, Macao, China

收稿日期:2018-04-29 修回日期:2018-05-21 出版日期:2018-08-05 发布日期:2018-08-05
通讯作者: Zhi-Nan Guo, Han Zhang E-mail:guozhinan@szu.edu.cn;hzhang@szu.edu.cn
基金资助:
Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).

Black phosphorus-based field effect transistor devices for Ag ions detection

Hui-De Wang(王慧德)¹, David K Sang¹, Zhi-Nan Guo(郭志男)¹, Rui Cao(曹睿)^1,2, Jin-Lai Zhao(赵劲来)², Muhammad Najeeb Ullah Shah¹, Tao-Jian Fan(范涛健)¹, Dian-Yuan Fan(范滇元)¹, Han Zhang(张晗)¹

1 Shenzhen Key Laboratory of Two-Dimensional Materials and Devices, Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
2 Faculty of Information Technology, Macau University of Science and Technology, Macao, China

Received:2018-04-29 Revised:2018-05-21 Online:2018-08-05 Published:2018-08-05
Contact: Zhi-Nan Guo, Han Zhang E-mail:guozhinan@szu.edu.cn;hzhang@szu.edu.cn
Supported by:
Project support by the National Natural Science Foundation of China (Grant Nos. 61605131 and 61435010) and the Shenzhen Science and Technology Research Fund, China (Grant No. JCYJ20150324141711624).

摘要/Abstract

摘要：

Black phosphorus (BP), an attractive two-dimensional (2D) semiconductor, is widely used in the fields of optoelectronic devices, biomedicine, and chemical sensing. Silver ion (Ag⁺), a commonly used additive in food industry, can sterilize and keep food fresh. But excessive intake of Ag⁺ will harm human health. Therefore, high sensitive, fast and simple Ag⁺ detection method is significant. Here, a high-performance BP field effect transistor (FET) sensor is fabricated for Ag⁺ detection with high sensitivity, rapid detection speed, and wide detection concentration range. The detection limit for Ag⁺ is 10^-10 mol/L. Testing time for each sample by this method is 60 s. Besides, the mechanism of BP-FET sensor for Ag⁺ detection is investigated systematically. The simple BP-FET sensor may inspire some relevant research and potential applications, such as providing an effective method for the actual detection of Ag⁺, especially in witnessed inspections field of food.

关键词: black phosphorus, semiconductor devices, chemical sensing, witnessed inspections

Abstract:

Key words: black phosphorus, semiconductor devices, chemical sensing, witnessed inspections

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

85.30.Tv (Field effect devices) 07.07.Df (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)

王慧德, David K Sang, 郭志男, 曹睿, 赵劲来, Muhammad Najeeb Ullah Shah, 范涛健, 范滇元, 张晗. Black phosphorus-based field effect transistor devices for Ag ions detection[J]. 中国物理B, 2018, 27(8): 87308-087308.

Hui-De Wang(王慧德), David K Sang, Zhi-Nan Guo(郭志男), Rui Cao(曹睿), Jin-Lai Zhao(赵劲来), Muhammad Najeeb Ullah Shah, Tao-Jian Fan(范涛健), Dian-Yuan Fan(范滇元), Han Zhang(张晗). Black phosphorus-based field effect transistor devices for Ag ions detection[J]. Chin. Phys. B, 2018, 27(8): 87308-087308.

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Black phosphorus-based field effect transistor devices for Ag ions detection

Black phosphorus-based field effect transistor devices for Ag ions detection

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