中国物理B ›› 2018, Vol. 27 ›› Issue (12): 127302-127302.doi: 10.1088/1674-1056/27/12/127302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

A simulation study of field plate termination in Ga2O3 Schottky barrier diodes

Hui Wang(王辉), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Si-Qi Lei(雷思琦), Hong-Yu Yu(于洪宇)   

  1. 1 Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
    2 School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
    3 Shenzhen Key Laboratory of The Third Generation Semiconductor, Shenzhen 518055, China;
    4 Guangdong GaN Devices Engineering and Technical Research Center, Shenzhen 518055, China
  • 收稿日期:2018-07-31 修回日期:2018-09-18 出版日期:2018-12-05 发布日期:2018-12-05
  • 通讯作者: Hong-Yu Yu E-mail:yuhy@sustc.edu.cn
  • 基金资助:

    Project supported by the Research Fund of Low Cost Fabrication of GaN Power Devices and System Integration, China (Grant No. JCYJ20160226192639004), the Research Fund of AlGaN HEMT MEMS Sensor for Work in Extreme Environment, China (Grant No. JCYJ20170412153356899), and the Research Fund of Reliability Mechanism and Circuit Simulation of GaN HEMT, China (Grant No. 2017A050506002).

A simulation study of field plate termination in Ga2O3 Schottky barrier diodes

Hui Wang(王辉)1,2,3,4, Ling-Li Jiang(蒋苓利)1,3,4, Xin-Peng Lin(林新鹏)1,3,4, Si-Qi Lei(雷思琦)1,3,4, Hong-Yu Yu(于洪宇)1,3,4   

  1. 1 Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
    2 School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
    3 Shenzhen Key Laboratory of The Third Generation Semiconductor, Shenzhen 518055, China;
    4 Guangdong GaN Devices Engineering and Technical Research Center, Shenzhen 518055, China
  • Received:2018-07-31 Revised:2018-09-18 Online:2018-12-05 Published:2018-12-05
  • Contact: Hong-Yu Yu E-mail:yuhy@sustc.edu.cn
  • Supported by:

    Project supported by the Research Fund of Low Cost Fabrication of GaN Power Devices and System Integration, China (Grant No. JCYJ20160226192639004), the Research Fund of AlGaN HEMT MEMS Sensor for Work in Extreme Environment, China (Grant No. JCYJ20170412153356899), and the Research Fund of Reliability Mechanism and Circuit Simulation of GaN HEMT, China (Grant No. 2017A050506002).

RichHTML

1

PDF (PC)

193

赞

摘要：

In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes (SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated. It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2 and Al2O3, but increases in HfO2. Furthermore, it is found that SiO2 and HfO2 are suitable for the 600 V rate Ga2O3 SBD, and Al2O3 is suitable for both 600 V and 1200 V rate Ga2O3 SBD. In addition, the comparison of Ga2O3 SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.

关键词: Ga2O3, Schottky barrier diode, field plate, termination technique

Abstract:

In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes (SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated. It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2 and Al2O3, but increases in HfO2. Furthermore, it is found that SiO2 and HfO2 are suitable for the 600 V rate Ga2O3 SBD, and Al2O3 is suitable for both 600 V and 1200 V rate Ga2O3 SBD. In addition, the comparison of Ga2O3 SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.

Key words: Ga2O3, Schottky barrier diode, field plate, termination technique

中图分类号:  (Semiconductor-electrolyte contacts)

  • 73.40.Mr
84.30.Jc (Power electronics; power supply circuits) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Kk (Junction diodes)