Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction

doi:10.1088/1674-1056/26/1/018504

中国物理B ›› 2017, Vol. 26 ›› Issue (1): 18504-018504.doi: 10.1088/1674-1056/26/1/018504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction

Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军)

Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics, Tsinghua University, Beijing 100084, China

收稿日期:2016-06-22 修回日期:2016-10-21 出版日期:2017-01-05 发布日期:2017-01-05
通讯作者: Renrong Liang E-mail:liangrr@mail.tsinghua.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61306105), the National Science and Technology Major Project of China (Grant No. 2011ZX02708-002), the Tsinghua University Initiative Scientific Research Program and the Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline Foundation of China.

Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction

Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军)

Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics, Tsinghua University, Beijing 100084, China

Received:2016-06-22 Revised:2016-10-21 Online:2017-01-05 Published:2017-01-05
Contact: Renrong Liang E-mail:liangrr@mail.tsinghua.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61306105), the National Science and Technology Major Project of China (Grant No. 2011ZX02708-002), the Tsinghua University Initiative Scientific Research Program and the Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-discipline Foundation of China.

摘要/Abstract

摘要： A Si/Ge heterojunction line tunnel field-effect transistor (LTFET) with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.

关键词: line tunnel field-effect transistor, heteromaterial gate, fully depleted

Abstract: A Si/Ge heterojunction line tunnel field-effect transistor (LTFET) with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.

Key words: line tunnel field-effect transistor, heteromaterial gate, fully depleted

中图分类号: (Semiconductor devices)

85.30.-z

85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.35.-p (Nanoelectronic devices)

张书琴, 梁仁荣, 王敬, 谭桢, 许军. Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction[J]. 中国物理B, 2017, 26(1): 18504-018504.

Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军). Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction[J]. Chin. Phys. B, 2017, 26(1): 18504-018504.

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Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction

Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction

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