中国物理B ›› 2017, Vol. 26 ›› Issue (1): 18505-018505.doi: 10.1088/1674-1056/26/1/018505

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

Xi Han(韩玺), Wei Xiang(向伟), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Yao-Yao Sun(孙姚耀), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川)   

  1. 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. Synergetic Innovation Centre of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2016-07-18 修回日期:2016-10-18 出版日期:2017-01-05 发布日期:2017-01-05
  • 通讯作者: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2013CB932904 and 2011CB922201), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), and the National Natural Science Foundation of China (Grant Nos. 61274013, 61290303, and 61306013).

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice

Xi Han(韩玺)1,2, Wei Xiang(向伟)1,2, Hong-Yue Hao(郝宏玥)1,2, Dong-Wei Jiang(蒋洞微)1,2, Yao-Yao Sun(孙姚耀)1,2, Guo-Wei Wang(王国伟)1,2, Ying-Qiang Xu(徐应强)1,2, Zhi-Chuan Niu(牛智川)1,2   

  1. 1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. Synergetic Innovation Centre of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:2016-07-18 Revised:2016-10-18 Online:2017-01-05 Published:2017-01-05
  • Contact: Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2013CB932904 and 2011CB922201), the National Special Funds for the Development of Major Research Equipment and Instruments, China (Grant No. 2012YQ140005), and the National Natural Science Foundation of China (Grant Nos. 61274013, 61290303, and 61306013).

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摘要： A very long wavelength infrared(VLWIR) focal plane array based on InAs/GaSb type-II super-lattices is demonstrated on a GaSb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K. A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of -20 mV, yielding a peak specific detectivity of 5.89×1010 cm·Hz1/2·W-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.

关键词: very long wavelength infrared, type-II InAs/GaSb super-lattices (T2SLs), focal plane array

Abstract: A very long wavelength infrared(VLWIR) focal plane array based on InAs/GaSb type-II super-lattices is demonstrated on a GaSb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K. A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of -20 mV, yielding a peak specific detectivity of 5.89×1010 cm·Hz1/2·W-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.

Key words: very long wavelength infrared, type-II InAs/GaSb super-lattices (T2SLs), focal plane array

中图分类号:  (Photodetectors (including infrared and CCD detectors))

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