中国物理B ›› 2016, Vol. 25 ›› Issue (4): 47102-047102.doi: 10.1088/1674-1056/25/4/047102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs

Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Hao Yuan(袁昊), Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明)   

  1. 1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
    2 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2015-11-16 修回日期:2016-01-07 出版日期:2016-04-05 发布日期:2016-04-05
  • 通讯作者: Qing-Wen Song E-mail:qwsong@xidian.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs

Qing-Wen Song(宋庆文)1,2, Xiao-Yan Tang(汤晓燕)2, Hao Yuan(袁昊)2, Yue-Hu Wang(王悦湖)2, Yi-Meng Zhang(张艺蒙)2, Hui Guo(郭辉)2, Ren-Xu Jia(贾仁需)2, Hong-Liang Lv(吕红亮)2, Yi-Men Zhang(张义门)2, Yu-Ming Zhang(张玉明)2   

  1. 1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
    2 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2015-11-16 Revised:2016-01-07 Online:2016-04-05 Published:2016-04-05
  • Contact: Qing-Wen Song E-mail:qwsong@xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101).

RichHTML

0

PDF (PC)

352

赞

摘要： In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes（SBDs）are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H-SiC theoretical limit line. The best achieved breakdown voltages (BVs) of the diodes on the 10 μm, 30 μm, and 50 μm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances (Ron-sp) are 2.1 mΩ ·cm2, 7.34 mΩ·cm2, and 30.3 mΩ·cm2, respectively.

关键词: 4H-SiC, Schottky-barrier diodes, breakdown, differential specific-on resistance

Abstract: In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes（SBDs）are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical predictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H-SiC theoretical limit line. The best achieved breakdown voltages (BVs) of the diodes on the 10 μm, 30 μm, and 50 μm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances (Ron-sp) are 2.1 mΩ ·cm2, 7.34 mΩ·cm2, and 30.3 mΩ·cm2, respectively.

Key words: 4H-SiC, Schottky-barrier diodes, breakdown, differential specific-on resistance

中图分类号:  (Semiconductor compounds)

  • 71.20.Nr
73.40.Sx (Metal-semiconductor-metal structures) 77.22.Jp (Dielectric breakdown and space-charge effects)