A novel physical parameter extraction approach for Schottky diodes

doi:10.1088/1674-1056/24/7/077305

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 77305-077305.doi: 10.1088/1674-1056/24/7/077305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A novel physical parameter extraction approach for Schottky diodes

王昊, 陈星, 许光辉, 黄卡玛

College of Electronics and Information Engineering, Sichuan University, Institute of Applied Electromagnetics, Chengdu 610065, China

收稿日期:2014-10-30 修回日期:2015-01-29 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant No. U1230112).

A novel physical parameter extraction approach for Schottky diodes

Wang Hao (王昊), Chen Xing (陈星), Xu Guang-Hui (许光辉), Huang Ka-Ma (黄卡玛)

College of Electronics and Information Engineering, Sichuan University, Institute of Applied Electromagnetics, Chengdu 610065, China

Received:2014-10-30 Revised:2015-01-29 Online:2015-07-05 Published:2015-07-05
Contact: Chen Xing E-mail:xingc@live.cn
Supported by:
Project supported by the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant No. U1230112).

摘要/Abstract

摘要： Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode's electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.

关键词: Schottky diode, parameter extraction, device modeling

Abstract: Parameter extraction is an important step for circuit simulation methods that are based on physical models of semiconductor devices. A novel physical parameter extraction approach for Schottky diodes is proposed in this paper. By employing a set of analytical formulas, this approach extracts all of the necessary physical parameters of the diode chip in a unique way. It then extracts the package parasitic parameters with a curve-fitting method. To validate the proposed approach, a model HSMS-282c commercial Schottky diode is taken as an example. Its physical parameters are extracted and used to simulate the diode's electrical characteristics. The simulated results based on the extracted parameters are compared with the measurements and a good agreement is obtained, which verifies the feasibility and accuracy of the proposed approach.

Key words: Schottky diode, parameter extraction, device modeling

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

85.30.Hi (Surface barrier, boundary, and point contact devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

王昊, 陈星, 许光辉, 黄卡玛. A novel physical parameter extraction approach for Schottky diodes[J]. 中国物理B, 2015, 24(7): 77305-077305.

Wang Hao (王昊), Chen Xing (陈星), Xu Guang-Hui (许光辉), Huang Ka-Ma (黄卡玛). A novel physical parameter extraction approach for Schottky diodes[J]. Chin. Phys. B, 2015, 24(7): 77305-077305.

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A novel physical parameter extraction approach for Schottky diodes

A novel physical parameter extraction approach for Schottky diodes

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