Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (12): 127307-127307.doi: 10.1088/1674-1056/22/12/127307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

A monolithic distributed phase shifter based on right-handed nonlinear transmission lines at 30 GHz

黄杰a b, 赵倩c, 杨浩d, 董军荣d, 张海英d   

  1. a School of Engineering and Technology, Southwest University, Chongqing 400715, China;
    b State Key Laboratory of Millimeter Waves, Nanjing 210096, China;
    c School of Physical Science and Technology, Southwest University, Chongqing 400715, China;
    d Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2013-06-25 修回日期:2013-08-28 出版日期:2013-10-25 发布日期:2013-10-25
  • 基金资助:
    Project supported by the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2013B004), the Research Fund for the Doctoral Program of Southwest University, China ( Grant No. SWU111030)，and the State Key Laboratory for Millimeter Waves of Southeast University, China (Grant No. K201312).

A monolithic distributed phase shifter based on right-handed nonlinear transmission lines at 30 GHz

Huang Jie (黄杰)a b, Zhao Qian (赵倩)c, Yang Hao (杨浩)d, Dong Jun-Rong (董军荣)d, Zhang Hai-Ying (张海英)d   

  1. a School of Engineering and Technology, Southwest University, Chongqing 400715, China;
    b State Key Laboratory of Millimeter Waves, Nanjing 210096, China;
    c School of Physical Science and Technology, Southwest University, Chongqing 400715, China;
    d Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2013-06-25 Revised:2013-08-28 Online:2013-10-25 Published:2013-10-25
  • Contact: Huang Jie E-mail:jiehuang@swu.edu.cn
  • Supported by:
    Project supported by the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2013B004), the Research Fund for the Doctoral Program of Southwest University, China ( Grant No. SWU111030)，and the State Key Laboratory for Millimeter Waves of Southeast University, China (Grant No. K201312).

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摘要： The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.

关键词: GaAs planar Schottky diode, phase shifter, right-handed nonlinear transmission lines, monolithic microwave integrated circuit

Abstract: The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.

Key words: GaAs planar Schottky diode, phase shifter, right-handed nonlinear transmission lines, monolithic microwave integrated circuit

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology) 84.40.Az (Waveguides, transmission lines, striplines) 84.40.Dc (Microwave circuits)