Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

doi:10.1088/1674-1056/24/3/037303

中国物理B ›› 2015, Vol. 24 ›› Issue (3): 37303-037303.doi: 10.1088/1674-1056/24/3/037303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

范敏敏, 徐静平, 刘璐, 白玉蓉, 黄勇

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2014-06-28 修回日期:2014-10-13 出版日期:2015-03-05 发布日期:2015-03-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61274112).

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇)

School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2014-06-28 Revised:2014-10-13 Online:2015-03-05 Published:2015-03-05
Contact: Xu Jing-Ping E-mail:jpxu@mail.hust.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61274112).

摘要/Abstract

摘要：

Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor (MOSFET) are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a short-channel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.

关键词: GeOI metal-oxide-semiconductor field-effect transistor, fringing capacitance, subthreshold swing, threshold voltage

Abstract:

Key words: GeOI metal-oxide-semiconductor field-effect transistor, fringing capacitance, subthreshold swing, threshold voltage

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.61.-r (Electrical properties of specific thin films)

范敏敏, 徐静平, 刘璐, 白玉蓉, 黄勇. Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor[J]. 中国物理B, 2015, 24(3): 37303-037303.

Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇). Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor[J]. Chin. Phys. B, 2015, 24(3): 37303-037303.

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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

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