中国物理B ›› 2015, Vol. 24 ›› Issue (10): 108502-108502.doi: 10.1088/1674-1056/24/10/108502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
张帅a, 董树荣b, 吴晓京a, 曾杰b, 钟雷b, 吴健b
Zhang Shuai (张帅)a, Dong Shu-Rong (董树荣)b, Wu Xiao-Jing (吴晓京)a, Zeng Jie (曾杰)b, Zhong Lei (钟雷)b, Wu Jian (吴健)b
摘要: Developing an electrostatic discharge (ESD) protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor (CMOS) technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor (GGNMOS) transistor triggered silicon-controlled rectifier (SCR) structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.
中图分类号: (Semiconductor-device characterization, design, and modeling)