中国物理B ›› 2015, Vol. 24 ›› Issue (10): 108502-108502.doi: 10.1088/1674-1056/24/10/108502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

An improved GGNMOS triggered SCR for high holding voltage ESD protection applications

张帅a, 董树荣b, 吴晓京a, 曾杰b, 钟雷b, 吴健b   

  1. a Department of Materials Science, Fudan University, Shanghai 200433, China;
    b Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2014-11-27 修回日期:2015-04-30 出版日期:2015-10-05 发布日期:2015-10-05

An improved GGNMOS triggered SCR for high holding voltage ESD protection applications

Zhang Shuai (张帅)a, Dong Shu-Rong (董树荣)b, Wu Xiao-Jing (吴晓京)a, Zeng Jie (曾杰)b, Zhong Lei (钟雷)b, Wu Jian (吴健)b   

  1. a Department of Materials Science, Fudan University, Shanghai 200433, China;
    b Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
  • Received:2014-11-27 Revised:2015-04-30 Online:2015-10-05 Published:2015-10-05
  • Contact: Zhang Shuai E-mail:szhang_fudan@hotmail.com

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摘要： Developing an electrostatic discharge (ESD) protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor (CMOS) technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor (GGNMOS) transistor triggered silicon-controlled rectifier (SCR) structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.

关键词: electrostatic discharge, holding voltage, GGSCR

Abstract: Developing an electrostatic discharge (ESD) protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor (CMOS) technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor (GGNMOS) transistor triggered silicon-controlled rectifier (SCR) structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.

Key words: electrostatic discharge, holding voltage, GGSCR

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.30.Rs (Thyristors) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))