A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology

doi:10.1088/1674-1056/24/10/108503

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 108503-108503.doi: 10.1088/1674-1056/24/10/108503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology

张立忠, 王源, 陆光易, 曹健, 张兴

Institute of Microelectronics, Peking University, Beijing 100871, China

收稿日期:2015-01-28 修回日期:2015-04-20 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606).

A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology

Zhang Li-Zhong (张立忠), Wang Yuan (王源), Lu Guang-Yi (陆光易), Cao Jian (曹健), Zhang Xing (张兴)

Institute of Microelectronics, Peking University, Beijing 100871, China

Received:2015-01-28 Revised:2015-04-20 Online:2015-10-05 Published:2015-10-05
Contact: Wang Yuan E-mail:wangyuan@pku.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606).

摘要/Abstract

摘要： A novel diode string-triggered gated-PiN junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor (CMOS) technology, is proposed in this paper. An embedded gated-PiN junction structure is employed to reduce the diode string leakage current to 13 nA/μ in a temperature range from 25 ℃ to 85 ℃. To provide the effective electrostatic discharge (ESD) protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.

关键词: electrostatic discharge (ESD), gated-PiN junction, diode string, parasitic resistance redistribution

Abstract: A novel diode string-triggered gated-PiN junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor (CMOS) technology, is proposed in this paper. An embedded gated-PiN junction structure is employed to reduce the diode string leakage current to 13 nA/μ in a temperature range from 25 ℃ to 85 ℃. To provide the effective electrostatic discharge (ESD) protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.

Key words: electrostatic discharge (ESD), gated-PiN junction, diode string, parasitic resistance redistribution

中图分类号: (Junction diodes)

85.30.Kk

85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 41.20.Cv (Electrostatics; Poisson and Laplace equations, boundary-value problems) 52.35.Fp (Electrostatic waves and oscillations (e.g., ion-acoustic waves))

张立忠, 王源, 陆光易, 曹健, 张兴. A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology[J]. 中国物理B, 2015, 24(10): 108503-108503.

Zhang Li-Zhong (张立忠), Wang Yuan (王源), Lu Guang-Yi (陆光易), Cao Jian (曹健), Zhang Xing (张兴). A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology[J]. Chin. Phys. B, 2015, 24(10): 108503-108503.

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A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology

A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology

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