›› 2014, Vol. 23 ›› Issue (7): 77303-077303.doi: 10.1088/1674-1056/23/7/077303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of annealing on performance of PEDOT：PSS/n-GaN Schottky solar cells

冯倩, 杜锴, 李宇坤, 时鹏, 冯庆   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2013-09-09 修回日期:2013-12-30 出版日期:2014-07-15 发布日期:2014-07-15
  • 基金资助:
    Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. JB141104).

Effect of annealing on performance of PEDOT：PSS/n-GaN Schottky solar cells

Feng Qian (冯倩), Du Kai (杜锴), Li Yu-Kun (李宇坤), Shi Peng (时鹏), Feng Qing (冯庆)   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2013-09-09 Revised:2013-12-30 Online:2014-07-15 Published:2014-07-15
  • Contact: Feng Qian E-mail:qfeng@mail.xidian.edu.cn
  • About author:73.30.+y; 79.60.Jv
  • Supported by:
    Project supported by the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. JB141104).

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摘要： We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT:PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage (Voc) increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT:PSS/GaN Schottky contact induced by variation of the work function of the PEDOT:PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT:PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density (Isc) up to 160 ℃ and the dropoff in Isc after annealing at 200 ℃.

关键词: gallium nitride, PEDOT：PSS, Schottky solar cell, post-annealing

Abstract: We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT:PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage (Voc) increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT:PSS/GaN Schottky contact induced by variation of the work function of the PEDOT:PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT:PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density (Isc) up to 160 ℃ and the dropoff in Isc after annealing at 200 ℃.

Key words: gallium nitride, PEDOT：PSS, Schottky solar cell, post-annealing

中图分类号:  (Surface double layers, Schottky barriers, and work functions)

  • 73.30.+y
79.60.Jv (Interfaces; heterostructures; nanostructures)