Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

doi:10.1088/1674-1056/23/5/057103

中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57103-057103.doi: 10.1088/1674-1056/23/5/057103

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Rectifying and photovoltaic properties of ZnCo₂O₄/Si heterostructure grown by pulsed laser deposition

陈钊^a, 温晓莉^b, 牛利伟^a, 段萌萌^a, 张云捷^a, 董祥雷^a, 陈长乐^a

a Key Laboratory of Space Applied Physics and Chemistry (Ministry of Education), School of Science, Northwestern Polytechnical University, Xi'an 710072, China;
b State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China

收稿日期:2013-09-17 修回日期:2013-10-20 出版日期:2014-05-15 发布日期:2014-05-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61078057), the Natural Science Foundation of Shannxi Province, China (Grant No. 2011GM6013), the Northwestern Polytechnical University Foundation for Fundamental Research, China (Grant Nos. JC20110270 and JC201271), and the Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, China (Grant No. LZUMMM2013001).

Rectifying and photovoltaic properties of ZnCo₂O₄/Si heterostructure grown by pulsed laser deposition

Chen Zhao (陈钊)^a, Wen Xiao-Li (温晓莉)^b, Niu Li-Wei (牛利伟)^a, Duan Meng-Meng (段萌萌)^a, Zhang Yun-Jie (张云捷)^a, Dong Xiang-Lei (董祥雷)^a, Chen Chang-Le (陈长乐)^a

a Key Laboratory of Space Applied Physics and Chemistry (Ministry of Education), School of Science, Northwestern Polytechnical University, Xi'an 710072, China;
b State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China

Received:2013-09-17 Revised:2013-10-20 Online:2014-05-15 Published:2014-05-15
Contact: Chen Zhao E-mail:zhaoch17@hotmail.com
About author:2014-3-26
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61078057), the Natural Science Foundation of Shannxi Province, China (Grant No. 2011GM6013), the Northwestern Polytechnical University Foundation for Fundamental Research, China (Grant Nos. JC20110270 and JC201271), and the Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, China (Grant No. LZUMMM2013001).

摘要/Abstract

摘要： ZnCo₂O₄/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo₂O₄/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveal that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm² and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the photovoltage peak of the heterostructures decreases with the increase of the temperature. This work may open new perspectives for ZnCo₂O₄/Si heterostructure-based devices.

关键词: ZnCo₂O₄/Si heterostructure, rectifying behavior, photovoltaic properties, pusled laser deposition

Abstract: ZnCo₂O₄/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo₂O₄/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveal that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm² and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the photovoltage peak of the heterostructures decreases with the increase of the temperature. This work may open new perspectives for ZnCo₂O₄/Si heterostructure-based devices.

Key words: ZnCo₂O₄/Si heterostructure, rectifying behavior, photovoltaic properties, pusled laser deposition

中图分类号: (II-VI semiconductors)

71.55.Gs

72.40.+w (Photoconduction and photovoltaic effects) 73.40.Ei (Rectification) 81.15.Fg (Pulsed laser ablation deposition)

陈钊, 温晓莉, 牛利伟, 段萌萌, 张云捷, 董祥雷, 陈长乐. Rectifying and photovoltaic properties of ZnCo₂O₄/Si heterostructure grown by pulsed laser deposition[J]. 中国物理B, 2014, 23(5): 57103-057103.

Chen Zhao (陈钊), Wen Xiao-Li (温晓莉), Niu Li-Wei (牛利伟), Duan Meng-Meng (段萌萌), Zhang Yun-Jie (张云捷), Dong Xiang-Lei (董祥雷), Chen Chang-Le (陈长乐). Rectifying and photovoltaic properties of ZnCo₂O₄/Si heterostructure grown by pulsed laser deposition[J]. Chin. Phys. B, 2014, 23(5): 57103-057103.

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Rectifying and photovoltaic properties of ZnCo₂O₄/Si heterostructure grown by pulsed laser deposition

Rectifying and photovoltaic properties of ZnCo₂O₄/Si heterostructure grown by pulsed laser deposition

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