›› 2014, Vol. 23 ›› Issue (9): 97101-097101.doi: 10.1088/1674-1056/23/9/097101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

M. Asghara, K. Mahmooda, M. A. Hasanb, I. T. Fergusonb, R. Tsub, M. Willderc   

  1. a Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100, Pakistan;
    b Department of Electrical and Computer Engineering, University of North Carolina Charlotte, NC 28223, USA;
    c Department of Science and Technology, Linköping University Norrköping, Sweden
  • 收稿日期:2014-01-21 修回日期:2014-02-23 出版日期:2014-09-15 发布日期:2014-09-15
  • 基金资助:
    Project supported by Fulbright-USA and UNC-Charlotte.

Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

M. Asghara, K. Mahmooda, M. A. Hasanb, I. T. Fergusonb, R. Tsub, M. Willderc   

  1. a Department of Physics, The Islamia University of Bahawalpur, Bahawalpur, 63100, Pakistan;
    b Department of Electrical and Computer Engineering, University of North Carolina Charlotte, NC 28223, USA;
    c Department of Science and Technology, Linköping University Norrköping, Sweden
  • Received:2014-01-21 Revised:2014-02-23 Online:2014-09-15 Published:2014-09-15
  • Contact: M. Asghar E-mail:mhashmi@iub.edu.pk
  • Supported by:
    Project supported by Fulbright-USA and UNC-Charlotte.

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摘要： We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49± 0.03 eV and capture cross-section of 8.57×10-18 cm2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

关键词: ZnO, secondary ion mass spectroscopy, photoluminescence, Raman spectroscopy

Abstract: We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49± 0.03 eV and capture cross-section of 8.57×10-18 cm2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

Key words: ZnO, secondary ion mass spectroscopy, photoluminescence, Raman spectroscopy

中图分类号:  (Semiconductor compounds)

  • 71.20.Nr
71.55.Gs (II-VI semiconductors) 73.20.Hb (Impurity and defect levels; energy states of adsorbed species) 73.30.+y (Surface double layers, Schottky barriers, and work functions)