中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57102-057102.doi: 10.1088/1674-1056/23/5/057102
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
袁昊a, 汤晓燕a, 张义门a, 张玉明a, 宋庆文b, 杨霏c, 吴昊c
Yuan Hao (袁昊)a, Tang Xiao-Yan (汤晓燕)a, Zhang Yi-Men (张义门)a, Zhang Yu-Ming (张玉明)a, Song Qing-Wen (宋庆文)b, Yang Fei (杨霏)c, Wu Hao (吴昊)c
摘要: Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes (SBDs) with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon (SIPOS) FP termination has been fabricated. The relative dielectric constant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO2 dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leakage current 20 uA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.
中图分类号: (Semiconductor compounds)