中国物理B ›› 2017, Vol. 26 ›› Issue (6): 68104-068104.doi: 10.1088/1674-1056/26/6/068104
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Qi-Chang Hu(胡启昌), Kai Ding(丁凯)
Qi-Chang Hu(胡启昌)1, Kai Ding(丁凯)2
摘要: We investigate the magnesium (Mg) incorporation efficiencies in MgxZn1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition (MOCVD) technique. In order to deposit high quality MgxZn1-xO films, atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O2 atmosphere and characterized by atomic force microscope (AFM). The AFM, scanning electron microscope (SEM), and x-ray diffraction (XRD) studies demonstrate that the MgxZn1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and VI/II ratio on Mg content in the films are investigated by XRD analysis based on Vegard's law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high VI/II ratio are good for obtaining high Mg content.
中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))