Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/22/6/067104

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 67104-067104.doi: 10.1088/1674-1056/22/6/067104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors

吕元杰^{a b}, 冯志红^a, 蔡树军^a, 敦少博^a, 刘波^a, 尹甲运^a, 张雄文^a, 房玉龙^a, 林兆军^b, 孟令国^b, 栾崇彪^b

a Science and Technology on Application Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

收稿日期:2012-07-31 修回日期:2012-11-08 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 10774090).

Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors

Lü Yuan-Jie (吕元杰)^{a b}, Feng Zhi-Hong (冯志红)^a, Cai Shu-Jun (蔡树军)^a, Dun Shao-Bo (敦少博)^a, Liu Bo (刘波)^a, Yin Jia-Yun (尹甲运)^a, Zhang Xiong-Wen (张雄文)^a, Fang Yu-Long (房玉龙)^a, Lin Zhao-Jun (林兆军)^b, Meng Ling-Guo (孟令国)^b, Luan Chong-Biao (栾崇彪)^b

a Science and Technology on Application Specific Integrated Circuit Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

Received:2012-07-31 Revised:2012-11-08 Online:2013-05-01 Published:2013-05-01
Contact: Feng Zhi-Hong E-mail:blueledviet@yahoo.com.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182 and 10774090).

摘要/Abstract

摘要： Using measured capacitance-voltage curves and current-voltage characteristics for the AlGaN/AlN/GaN heterostructure field-effect transistors with different gate lengths and drain-to-source distances, the influence of drain bias on the electron mobility is investigated. It is found that below the knee voltage the longitudinal optical (LO) phonon scattering and interface roughness scattering are dominant for the sample with a large ratio of gate length to drain-to-source distance (here 4/5), and the polarization Coulomb field scattering is dominant for the sample with a small ratio (here 1/5). However, the above polarization Coulomb field scattering is weakened in the sample with a small drain-to-source distance (here 20 μm) compared with the one with a large distance (here 100 μm). This is due to the induced strain in the AlGaN layer caused by the drain bias.

关键词: AlGaN/GaN heterostructures, electron mobility, drain bias, electron scattering

Abstract: Using measured capacitance-voltage curves and current-voltage characteristics for the AlGaN/AlN/GaN heterostructure field-effect transistors with different gate lengths and drain-to-source distances, the influence of drain bias on the electron mobility is investigated. It is found that below the knee voltage the longitudinal optical (LO) phonon scattering and interface roughness scattering are dominant for the sample with a large ratio of gate length to drain-to-source distance (here 4/5), and the polarization Coulomb field scattering is dominant for the sample with a small ratio (here 1/5). However, the above polarization Coulomb field scattering is weakened in the sample with a small drain-to-source distance (here 20 μm) compared with the one with a large distance (here 100 μm). This is due to the induced strain in the AlGaN layer caused by the drain bias.

Key words: AlGaN/GaN heterostructures, electron mobility, drain bias, electron scattering

中图分类号: (III-V semiconductors)

71.55.Eq

77.22.Ch (Permittivity (dielectric function)) 77.22.Ej (Polarization and depolarization)

吕元杰, 冯志红, 蔡树军, 敦少博, 刘波, 尹甲运, 张雄文, 房玉龙, 林兆军, 孟令国, 栾崇彪. Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2013, 22(6): 67104-067104.

Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军), Dun Shao-Bo (敦少博), Liu Bo (刘波), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Fang Yu-Long (房玉龙), Lin Zhao-Jun (林兆军), Meng Ling-Guo (孟令国), Luan Chong-Biao (栾崇彪). Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors[J]. Chin. Phys. B, 2013, 22(6): 67104-067104.

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Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors

Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors

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