中国物理B ›› 2013, Vol. 22 ›› Issue (3): 37802-037802.doi: 10.1088/1674-1056/22/3/037802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

顾溢a, 张永刚a, 宋禹忻b, 叶虹b, 曹远迎a, 李爱珍a, 王庶民a b   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China;
    b Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden
  • 收稿日期:2012-08-21 修回日期:2012-11-26 出版日期:2013-02-01 发布日期:2013-02-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB619200), the National Natural Science Foundation of China (Grant Nos. 61275113, 61204133, and 60906047), the Innovative Founding of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, and the Swedish Research Council.

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

Gu Yi (顾溢)a, Zhang Yong-Gang (张永刚)a, Song Yu-Xin (宋禹忻)b, Ye Hong (叶虹)b, Cao Yuan-Ying (曹远迎)a, Li Ai-Zhen (李爱珍)a, Wang Shu-Min (王庶民)a b   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China;
    b Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden
  • Received:2012-08-21 Revised:2012-11-26 Online:2013-02-01 Published:2013-02-01
  • Contact: Zhang Yong-Gang E-mail:ygzhang@mail.sim.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB619200), the National Natural Science Foundation of China (Grant Nos. 61275113, 61204133, and 60906047), the Innovative Founding of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, and the Swedish Research Council.

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摘要： The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated by using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.

关键词: InGaAsBi, strained quantum wells, photoluminescence

Abstract: The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated by using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.

Key words: InGaAsBi, strained quantum wells, photoluminescence

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
78.67.De (Quantum wells) 61.05.cp (X-ray diffraction) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)