中国物理B ›› 2013, Vol. 22 ›› Issue (3): 37802-037802.doi: 10.1088/1674-1056/22/3/037802
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
顾溢a, 张永刚a, 宋禹忻b, 叶虹b, 曹远迎a, 李爱珍a, 王庶民a b
Gu Yi (顾溢)a, Zhang Yong-Gang (张永刚)a, Song Yu-Xin (宋禹忻)b, Ye Hong (叶虹)b, Cao Yuan-Ying (曹远迎)a, Li Ai-Zhen (李爱珍)a, Wang Shu-Min (王庶民)a b
摘要: The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated by using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.
中图分类号: (III-V semiconductors)