Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO2/Si substrate

doi:10.1088/1674-1056/22/2/027802

中国物理B ›› 2013, Vol. 22 ›› Issue (2): 27802-027802.doi: 10.1088/1674-1056/22/2/027802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO₂/Si substrate

李邓玥, 李洪涛, 孙合辉, 赵连城

Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin 150001, China

收稿日期:2012-05-11 修回日期:2012-07-25 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the Special Funds for State 11th Five-Year Basic Research Project of China (Grant No. 51318060207).

Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO₂/Si substrate

Li Deng-Yue (李邓玥), Li Hong-Tao (李洪涛), Sun He-Hui (孙合辉), Zhao Lian-Cheng (赵连城 )

Department of Information Materials Science and Technology, Harbin Institute of Technology, Harbin 150001, China

Received:2012-05-11 Revised:2012-07-25 Online:2013-01-01 Published:2013-01-01
Contact: Li Deng-Yue E-mail:dyli2012@126.com
Supported by:
Project supported by the Special Funds for State 11th Five-Year Basic Research Project of China (Grant No. 51318060207).

摘要/Abstract

摘要： Ultrathin InSb thin films on SiO₂/Si substrates are prepared by radio frequency (RF) magnetron sputtering and rapid thermal annealing (RTA) at 300, 400, and 500℃, respectively. X-ray diffraction (XRD) indicates that InSb film treated by RTA at 500℃, which is higher than its melting temperature (about 485℃), shows a monocrystalline-like feature. High-resolution transmission electron microscopy (HRTEM) micrograph shows that melt recrystallization of InSb film on SiO₂/Si(111) substrate is along the (111) planes. The transmittances of InSb films decrease and the optical band gaps redshift from 0.24 eV to 0.19 eV with annealing temperature increasing from 300℃ to 500℃, which is indicated by Fourier transform infrared spectroscopy (FTIR) measurement. The observed changes demonstrate that RAT is a viable technique for improving characteristics of InSb films, especially the melt-recrystallized film treated by RTA at 500℃.

关键词: XOI, solid-phase recrystallization, rapid thermal annealing

Abstract: Ultrathin InSb thin films on SiO₂/Si substrates are prepared by radio frequency (RF) magnetron sputtering and rapid thermal annealing (RTA) at 300, 400, and 500℃, respectively. X-ray diffraction (XRD) indicates that InSb film treated by RTA at 500℃, which is higher than its melting temperature (about 485℃), shows a monocrystalline-like feature. High-resolution transmission electron microscopy (HRTEM) micrograph shows that melt recrystallization of InSb film on SiO₂/Si(111) substrate is along the (111) planes. The transmittances of InSb films decrease and the optical band gaps redshift from 0.24 eV to 0.19 eV with annealing temperature increasing from 300℃ to 500℃, which is indicated by Fourier transform infrared spectroscopy (FTIR) measurement. The observed changes demonstrate that RAT is a viable technique for improving characteristics of InSb films, especially the melt-recrystallized film treated by RTA at 500℃.

Key words: XOI, solid-phase recrystallization, rapid thermal annealing

中图分类号: (Semiconductors)

78.40.Fy

43.35.Ns (Acoustical properties of thin films) 68.60.Bs (Mechanical and acoustical properties)

李邓玥, 李洪涛, 孙合辉, 赵连城 . Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO₂/Si substrate[J]. 中国物理B, 2013, 22(2): 27802-027802.

Li Deng-Yue (李邓玥), Li Hong-Tao (李洪涛), Sun He-Hui (孙合辉), Zhao Lian-Cheng (赵连城 ). Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO₂/Si substrate[J]. Chin. Phys. B, 2013, 22(2): 27802-027802.

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Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO₂/Si substrate

Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO₂/Si substrate

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