Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

doi:10.1088/1674-1056/22/2/027702

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (2): 27702-027702.doi: 10.1088/1674-1056/22/2/027702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition

樊继斌, 刘红侠, 马飞, 卓青青, 郝跃

School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2012-07-16 修回日期:2012-08-22 出版日期:2013-01-01 发布日期:2013-01-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097) and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083).

Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition

Fan Ji-Bin (樊继斌), Liu Hong-Xia (刘红侠), Ma Fei (马飞), Zhuo Qing-Qing (卓青青), Hao Yue (郝跃)

School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2012-07-16 Revised:2012-08-22 Online:2013-01-01 Published:2013-01-01
Contact: Fan Ji-Bin E-mail:jbfan@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097) and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083).

摘要/Abstract

摘要： A comparative study of two kinds of oxidants (H₂O and O₃) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlO_x) films is carried out. The effects of different oxidants on the physical properties and electrical characteristics of HfAlO_x films are studied. The preliminary testing results indicate that the impurity level of HfAlO_x films grown with both H₂O and O₃ used as oxidants can be well controlled, which has significant effects on the dielectric constant, valence band, electrical properties, and stability of HfAlO_x film. Additional thermal annealing effects on the properties of HfAlO_x films grown with different oxidants are also investigated.

关键词: HfAlO_x, atomic layer deposition, oxidants, annealing

Abstract: A comparative study of two kinds of oxidants (H₂O and O₃) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlO_x) films is carried out. The effects of different oxidants on the physical properties and electrical characteristics of HfAlO_x films are studied. The preliminary testing results indicate that the impurity level of HfAlO_x films grown with both H₂O and O₃ used as oxidants can be well controlled, which has significant effects on the dielectric constant, valence band, electrical properties, and stability of HfAlO_x film. Additional thermal annealing effects on the properties of HfAlO_x films grown with different oxidants are also investigated.

Key words: HfAlO_x, atomic layer deposition, oxidants, annealing

中图分类号:

77.55.D-

82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))

樊继斌, 刘红侠, 马飞, 卓青青, 郝跃. Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition[J]. Chin. Phys. B, 2013, 22(2): 27702-027702.

Fan Ji-Bin (樊继斌), Liu Hong-Xia (刘红侠), Ma Fei (马飞), Zhuo Qing-Qing (卓青青), Hao Yue (郝跃). Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition[J]. Chin. Phys. B, 2013, 22(2): 27702-027702.

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Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition

Influences of different oxidants on the characteristics of HfAlO_x films deposited by atomic layer deposition

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