Pits and adatoms at the interface of 1-ML C84/Ag (111)

doi:10.1088/1674-1056/22/12/126803

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (12): 126803-126803.doi: 10.1088/1674-1056/22/12/126803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Pits and adatoms at the interface of 1-ML C₈₄/Ag (111)

王鹏^{a b}, 张寒洁^a, 李艳君^a, 盛春荠^a, 李文杰^a, 邢秀娜^a, 李海洋^a, 何丕模^a, 鲍世宁^a, 李宏年^a

a Department of Physics, Zhejiang University, Hangzhou 310027, China;
b Department of Applied Physics, Shandong University of Science and Technology, Qingdao 266590, China

收稿日期:2013-06-06 修回日期:2013-09-23 出版日期:2013-10-25 发布日期:2013-10-25
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11079028 and 11374258).

Pits and adatoms at the interface of 1-ML C₈₄/Ag (111)

Wang Peng (王鹏)^{a b}, Zhang Han-Jie (张寒洁)^a, Li Yan-Jun (李艳君)^a, Sheng Chun-Qi (盛春荠)^a, Li Wen-Jie (李文杰)^a, Xing Xiu-Na (邢秀娜)^a, Li Hai-Yang (李海洋)^a, He Pi-Mo (何丕模)^a, Bao Shi-Ning (鲍世宁)^a, Li Hong-Nian (李宏年)^a

a Department of Physics, Zhejiang University, Hangzhou 310027, China;
b Department of Applied Physics, Shandong University of Science and Technology, Qingdao 266590, China

Received:2013-06-06 Revised:2013-09-23 Online:2013-10-25 Published:2013-10-25
Contact: Li Hong-Nian E-mail:phylihn@public.zju.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11079028 and 11374258).

摘要/Abstract

摘要： We prepare a well-defined C₈₄ monolayer on the surface of Ag (111) and study the geometric structure by scanning tunneling microscopy (STM). The C₈₄ molecules form a nearly close-packed incommensurate R30° lattice. The lattice is long-distance ordered with numerous local disorders. The monolayer exhibits complex bright/dim contrast; the largest height difference between the molecules can be greater than 0.4 nm. Annealing the monolayer at 380 ℃ can desorb part of the molecules, but more than sixty percent molecules stay on the Ag (111) surface even after the sample has been annealed at 650 ℃. Our analyses reveal that the 7-atom pits form beneath many molecules. Some other molecules sit at the 1-atom pits. Ag adatoms (those removed substrate atoms, accompanying the pit formation) play a very important role in this system. The adatoms can either stabilize or destabilize the monolayer, depending on the distribution manner of the adatoms at the interface. The distribution manner is determined by the co-play of the following factors: the dimension of the interstitial regions of the C₈₄ overlayer, the number of the adatoms, and the long-distance migration of part adatoms.

关键词: 1-ML C₈₄/Ag (111), geometric structure, pit, adatom, STM

Abstract: We prepare a well-defined C₈₄ monolayer on the surface of Ag (111) and study the geometric structure by scanning tunneling microscopy (STM). The C₈₄ molecules form a nearly close-packed incommensurate R30° lattice. The lattice is long-distance ordered with numerous local disorders. The monolayer exhibits complex bright/dim contrast; the largest height difference between the molecules can be greater than 0.4 nm. Annealing the monolayer at 380 ℃ can desorb part of the molecules, but more than sixty percent molecules stay on the Ag (111) surface even after the sample has been annealed at 650 ℃. Our analyses reveal that the 7-atom pits form beneath many molecules. Some other molecules sit at the 1-atom pits. Ag adatoms (those removed substrate atoms, accompanying the pit formation) play a very important role in this system. The adatoms can either stabilize or destabilize the monolayer, depending on the distribution manner of the adatoms at the interface. The distribution manner is determined by the co-play of the following factors: the dimension of the interstitial regions of the C₈₄ overlayer, the number of the adatoms, and the long-distance migration of part adatoms.

Key words: 1-ML C₈₄/Ag (111), geometric structure, pit, adatom, STM

中图分类号: (Fullerenes)

68.55.ap

68.35.Ct (Interface structure and roughness) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM)) 68.43.Hn (Structure of assemblies of adsorbates (two-and three-dimensional clustering))

王鹏, 张寒洁, 李艳君, 盛春荠, 李文杰, 邢秀娜, 李海洋, 何丕模, 鲍世宁, 李宏年. Pits and adatoms at the interface of 1-ML C₈₄/Ag (111)[J]. Chin. Phys. B, 2013, 22(12): 126803-126803.

Wang Peng (王鹏), Zhang Han-Jie (张寒洁), Li Yan-Jun (李艳君), Sheng Chun-Qi (盛春荠), Li Wen-Jie (李文杰), Xing Xiu-Na (邢秀娜), Li Hai-Yang (李海洋), He Pi-Mo (何丕模), Bao Shi-Ning (鲍世宁), Li Hong-Nian (李宏年). Pits and adatoms at the interface of 1-ML C₈₄/Ag (111)[J]. Chin. Phys. B, 2013, 22(12): 126803-126803.

参考文献 31

[1]	Wang P, Zhang H J, Li Y J, Sheng C Q, Shen Y, Li H Y, Bao S N and Li H N 2012 Phys. Rev. B 85 205445
[2]	Maxwell A J, Brühwiler P A, Andersson S, Arvanitis D, Hernnäs B, Karis O, Mancini D C, Mårtensson N, Gray S M, Johansson M K J and Johansson L S O 1995 Phys. Rev. B 52 R5546
[3]	Murray P W, Pedersen M Ø, Lægsgaard E, Stensgaard I and Besenbacher F 1997 Phys. Rev. B 55 9360
[4]	Pedio M, Felici R, Torrelles X, Rudolf P, Capozi M, Rius J and Ferrer S 2000 Phys. Rev. Lett. 85 1040
[5]	Weckesser J, Barth J V and Kern K 2001 Phys. Rev. B 64 R161403
[6]	Felici R, Pedio M, Borgatti F, Iannotta S, Capozi M, Ciullo G and Stierle A 2005 Nat. Mater. 4 688
[7]	Zhang X Q, He W, Zhao A D, Li H N, Chen L, Pai W W, Hou J G, Loy M M T, Yang J L and Xiao X D 2007 Phys. Rev. B 75 235444
[8]	Lin C H, Lin K C, Tang T B and Pai W W 2008 J. Nanosci. Nanotechnol. 8 602
[9]	Li H I, Pussi K, Hanna K J, Wang L L, Johnson D D, Cheng H P, Shin H, Curtarolo S, Moritz W, Smerdon J A, McGrath R and Diehl R D 2009 Phys. Rev. Lett. 103 056101
[10]	Gardener J A, Briggs G A D and Castell M R 2009 Phys. Rev. B 80 235434
[11]	Pai W W, Jeng H T, Cheng C M, Lin C H, Xiao X D, Zhao A D, Zhang X Q, Xu G, Shi X Q, Van Hove M A, Hsue C S and Tsuei K D 2010 Phys. Rev. Lett. 104 036103
[12]	Shi X Q, Van Hove M A and Zhang R Q 2012 Phys. Rev. B 85 075421
[13]	Stengel M, De Vita A and Baldereschi A 2003 Phys. Rev. Lett. 91 166101
[14]	Weckesser J, Cepek C, Fasel R, Barth J V, Baumberger F, Greber T and Kern K 2001 J. Chem. Phys. 115 9001
[15]	Chen W, Zhang H L, Huang H, Chen L and Wee A T S 2008 ACS Nano 2 693
[16]	Tang L, Xie Y and Guo Q 2011 J. Chem. Phys. 135 114702
[17]	Pussi K, Li H I, Shin H, Serkovic Loli L N, Shukla A K, Ledieu J, Fournée V, Wang L L, Su S Y, Marino K E, Snyder M V and Diehl R D 2012 Phys. Rev. B 86 205406
[18]	Pai W W and Hsu C L 2003 Phys. Rev. B 68 R121403
[19]	Pai W W, Hsu C L, Lin M C, Lin K C and Tang T B 2004 Phys. Rev. B 69 125405
[20]	Guo S, Nagel P M, Deering A L, Van Lue S M and Alex Kandel S 2007 Surf. Sci. 601 994
[21]	Wang X D, Hashizume T, Shinohara H, Saito Y, Nishina Y and Sakurai T 1993 Phys. Rev. B 47 15923
[22]	Wang P, Ni J F, Meng L, Wang X B, Sheng C Q, Zhang W H, Xu Y, Xu F Q, Zhu J F and Li H N 2012 Carbon 50 1762
[23]	Margadonna S, Brown C M, Dennis T J S, Lappas A, Pattison P, Prassides K and Shinohara H 1998 Chem. Mater. 10 1742
[24]	Altman E I and Colton R J 1993 Surf. Sci. 295 13
[25]	Hashizume T, Motai K, Wang X D, Shinohara H, Saito Y, Maruyama Y, Ohno K, Kawazoe Y, Nishina Y, Pickering H W, Kuk Y and Sakurai T 1993 Phys. Rev. Lett. 71 2959
[26]	Lide D R 2007 CRC Handbook of Chemistry and Physics (Boca, Raton, FL: Taylor and Francis, Florida, 2007) Internet Version
[27]	Li H N, Yang H, Wang X X, Ni J F, Wang P, Meng L, Wang X B, Kurash I, Qian H J, Wang J O and Liu Z Y 2009 J. Phys.: Condens. Matter 21 265502
[28]	Segall M D, Lindan P J D, Probert M J, Pickard C J, Hasnip P J, Clark S J and Payne M C 2002 J. Phys.: Condens. Matter 14 2717
[29]	Xu G, Shi X Q, Zhang R Q, Pai W W, Jeng H T and Van Hove M A 2012 Phys. Rev. B 86 075419
[30]	Wang L L and Cheng H P 2004 Phys. Rev. B 69 165417
[31]	Tang L, Zhang X, Guo Q, Wu Y N, Wang L L and Cheng H P 2010 Phys. Rev. B 82 125414

Pits and adatoms at the interface of 1-ML C₈₄/Ag (111)

Pits and adatoms at the interface of 1-ML C₈₄/Ag (111)

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