中国物理B ›› 2022, Vol. 31 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/ac2b90

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Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn4N epitaxial films with perpendicular magnetic anisotropy

Zeyu Zhang(张泽宇)1, Qiang Zhang(张强)2, and Wenbo Mi(米文博)1,†   

  1. 1 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China;
    2 Core Technology Platforms, New York University Abu Dhabi, P. O. Box 129188, Abu Dhabi, United Arab Emirates
  • 收稿日期:2021-08-20 修回日期:2021-09-13 接受日期:2021-09-30 出版日期:2022-03-16 发布日期:2022-03-16
  • 通讯作者: Wenbo Mi E-mail:miwenbo@tju.edu.cn
  • 基金资助:
    This work was supported by the National Natural Science Foundation of China (Grant Nos. 51871161 and 52071233).

Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn4N epitaxial films with perpendicular magnetic anisotropy

Zeyu Zhang(张泽宇)1, Qiang Zhang(张强)2, and Wenbo Mi(米文博)1,†   

  1. 1 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China;
    2 Core Technology Platforms, New York University Abu Dhabi, P. O. Box 129188, Abu Dhabi, United Arab Emirates
  • Received:2021-08-20 Revised:2021-09-13 Accepted:2021-09-30 Online:2022-03-16 Published:2022-03-16
  • Contact: Wenbo Mi E-mail:miwenbo@tju.edu.cn
  • Supported by:
    This work was supported by the National Natural Science Foundation of China (Grant Nos. 51871161 and 52071233).

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摘要： Epitaxial Mn$_{4}$N films with different thicknesses were fabricated by facing-target reactive sputtering and their anomalous Hall effect (AHE) is investigated systematically. The Hall resistivity shows a reversed magnetic hysteresis loop with the magnetic field. The magnitude of the anomalous Hall resistivity sharply decreases with decreasing temperature from 300 K to 150 K. The AHE scaling law in Mn$_{4}$N films is influenced by the temperature-dependent magnetization, carrier concentration and interfacial scattering. Different scaling laws are used to distinguish the various contributions of AHE mechanisms. The scaling exponent $\gamma > 2$ for the conventional scaling in Mn$_{4}$N films could be attributed to the residual resistivity $\rho_{xx0}$. The longitudinal conductivity $\sigma_{xx}$ falls into the dirty regime. The scaling of $\rho_{\rm AH}=\alpha \rho_{xx0} +b\rho_{xx}^{n}$ is used to separate out the temperature-independent $\rho_{xx0}$ from extrinsic contribution. Moreover, the relationship between $\rho_{\rm AH}$ and $\rho_{xx}$ is fitted by the proper scaling to clarify the contributions from extrinsic and intrinsic mechanisms of AHE, which demonstrates that the dominant mechanism of AHE in the Mn$_{4}$N films can be ascribed to the competition between skew scattering, side jump and the intrinsic mechanisms.

关键词: Mn4N, epitaxial film, anomalous Hall effect, scaling law

Abstract: Epitaxial Mn$_{4}$N films with different thicknesses were fabricated by facing-target reactive sputtering and their anomalous Hall effect (AHE) is investigated systematically. The Hall resistivity shows a reversed magnetic hysteresis loop with the magnetic field. The magnitude of the anomalous Hall resistivity sharply decreases with decreasing temperature from 300 K to 150 K. The AHE scaling law in Mn$_{4}$N films is influenced by the temperature-dependent magnetization, carrier concentration and interfacial scattering. Different scaling laws are used to distinguish the various contributions of AHE mechanisms. The scaling exponent $\gamma > 2$ for the conventional scaling in Mn$_{4}$N films could be attributed to the residual resistivity $\rho_{xx0}$. The longitudinal conductivity $\sigma_{xx}$ falls into the dirty regime. The scaling of $\rho_{\rm AH}=\alpha \rho_{xx0} +b\rho_{xx}^{n}$ is used to separate out the temperature-independent $\rho_{xx0}$ from extrinsic contribution. Moreover, the relationship between $\rho_{\rm AH}$ and $\rho_{xx}$ is fitted by the proper scaling to clarify the contributions from extrinsic and intrinsic mechanisms of AHE, which demonstrates that the dominant mechanism of AHE in the Mn$_{4}$N films can be ascribed to the competition between skew scattering, side jump and the intrinsic mechanisms.

Key words: Mn4N, epitaxial film, anomalous Hall effect, scaling law

中图分类号:  (Metal and metallic alloys)

  • 73.61.At
75.47.Np (Metals and alloys) 75.50.Gg (Ferrimagnetics) 72.10.Di (Scattering by phonons, magnons, and other nonlocalized excitations)