中国物理B ›› 2023, Vol. 32 ›› Issue (3): 37305-037305.doi: 10.1088/1674-1056/acac1b

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Superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures

Yuan Liu(刘源)1,†, Zhongran Liu(刘中然)2,†, Meng Zhang(张蒙)1, Yanqiu Sun(孙艳秋)1, He Tian(田鹤)2,3, and Yanwu Xie(谢燕武)1,4,‡   

  1. 1 Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou 310027, China;
    2 Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
    3 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China;
    4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • 收稿日期:2022-11-07 修回日期:2022-12-07 接受日期:2022-12-16 出版日期:2023-02-14 发布日期:2023-02-14
  • 通讯作者: Yanwu Xie E-mail:ywxie@zju.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11934016 and 12074334), the Key R&D Program of Zhejiang Province, China (Grant Nos. 2020C01019 and 2021C01002), and the Fundamental Research Funds for the Central Universities of China.

Superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures

Yuan Liu(刘源)1,†, Zhongran Liu(刘中然)2,†, Meng Zhang(张蒙)1, Yanqiu Sun(孙艳秋)1, He Tian(田鹤)2,3, and Yanwu Xie(谢燕武)1,4,‡   

  1. 1 Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou 310027, China;
    2 Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;
    3 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China;
    4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
  • Received:2022-11-07 Revised:2022-12-07 Accepted:2022-12-16 Online:2023-02-14 Published:2023-02-14
  • Contact: Yanwu Xie E-mail:ywxie@zju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11934016 and 12074334), the Key R&D Program of Zhejiang Province, China (Grant Nos. 2020C01019 and 2021C01002), and the Fundamental Research Funds for the Central Universities of China.

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摘要： Complex oxide heterointerfaces can host a rich of emergent phenomena, and epitaxial growth is usually at the heart of forming these interfaces. Recently, a strong crystalline-orientation-dependent two-dimensional superconductivity was discovered at interfaces between KTaO3 single-crystal substrates and films of other oxides. Unexpectedly, rare of these oxide films was epitaxially grown. Here, we report the existence of superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures, with a superconducting transition temperature of ～ 0.5 K. Meanwhile, no superconductivity was detected in the (001)- and (110)-orientated LaVO3/KTaO3 heterostructures down to 50 mK. Moreover, we find that for the LaVO3/KTaO3(111) interfaces to be conducting, an oxygen-deficient growth environment and a minimum LaVO3 thickness of ～ 0.8 nm (～ 2 unit cells) are needed.

关键词: interfaces, superconductivity, epitaxy

Abstract: Complex oxide heterointerfaces can host a rich of emergent phenomena, and epitaxial growth is usually at the heart of forming these interfaces. Recently, a strong crystalline-orientation-dependent two-dimensional superconductivity was discovered at interfaces between KTaO3 single-crystal substrates and films of other oxides. Unexpectedly, rare of these oxide films was epitaxially grown. Here, we report the existence of superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures, with a superconducting transition temperature of ～ 0.5 K. Meanwhile, no superconductivity was detected in the (001)- and (110)-orientated LaVO3/KTaO3 heterostructures down to 50 mK. Moreover, we find that for the LaVO3/KTaO3(111) interfaces to be conducting, an oxygen-deficient growth environment and a minimum LaVO3 thickness of ～ 0.8 nm (～ 2 unit cells) are needed.

Key words: interfaces, superconductivity, epitaxy

中图分类号:  (Electronic transport in interface structures)

  • 73.40.-c
74.25.F- (Transport properties) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)