In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications

doi:10.1088/1674-1056/22/10/107803

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107803-107803.doi: 10.1088/1674-1056/22/10/107803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications

曹敏^a, 门传玲^a, 朱德明^a, 田子傲^b, 安正华^b

a School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;
b State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China

收稿日期:2013-05-18 修回日期:2013-06-20 出版日期:2013-08-30 发布日期:2013-08-30
基金资助:
Project supported by the Natural Science Foundation of Shanghai (Grant No. 13ZR1428200).

In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications

Cao Min (曹敏)^a, Men Chuan-Ling (门传玲)^a, Zhu De-Ming (朱德明)^a, Tian Zi-Ao (田子傲)^b, An Zheng-Hua (安正华)^b

a School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;
b State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433, China

Received:2013-05-18 Revised:2013-06-20 Online:2013-08-30 Published:2013-08-30
Contact: Men Chuan-Ling E-mail:anziloveling@126.com
Supported by:
Project supported by the Natural Science Foundation of Shanghai (Grant No. 13ZR1428200).

摘要/Abstract

摘要： Highly crystalline and transparent CdS films are grown by utilizing the vacuum thermal evaporation (VTE) method. The structural, surface morphological, and optical properties of the films are studied and compared with those prepared by chemical bath deposition (CBD). It is found that the films deposited at a high substrate temperature (200 ℃) have a preferential orientation along (002) which is consistent with CBD-grown films. Absorption spectra reveal that the films are highly transparent and the optical band gap values are found to be in a range of 2.44 eV-2.56 eV. CuIn_1-xGa_xSe₂ (CIGS) solar cells with in-situ VTE-grown CdS films exhibit higher values of V_oc together with smaller values of J_sc than those from CBD. Eventually the conversion efficiency and fill factor become slightly better than those from the CBD method. Our work suggests that the in-situ thermal evaporation method can be a competitive alternative to the CBD method, particularly in the physical-and vacuum-based CIGS technology.

关键词: CdS films, CIGS thin film solar cell, vacuum thermal evaporation (VTE), chemical bath deposition (CBD)

Abstract: Highly crystalline and transparent CdS films are grown by utilizing the vacuum thermal evaporation (VTE) method. The structural, surface morphological, and optical properties of the films are studied and compared with those prepared by chemical bath deposition (CBD). It is found that the films deposited at a high substrate temperature (200 ℃) have a preferential orientation along (002) which is consistent with CBD-grown films. Absorption spectra reveal that the films are highly transparent and the optical band gap values are found to be in a range of 2.44 eV-2.56 eV. CuIn_1-xGa_xSe₂ (CIGS) solar cells with in-situ VTE-grown CdS films exhibit higher values of V_oc together with smaller values of J_sc than those from CBD. Eventually the conversion efficiency and fill factor become slightly better than those from the CBD method. Our work suggests that the in-situ thermal evaporation method can be a competitive alternative to the CBD method, particularly in the physical-and vacuum-based CIGS technology.

Key words: CdS films, CIGS thin film solar cell, vacuum thermal evaporation (VTE), chemical bath deposition (CBD)

中图分类号: (II-VI semiconductors)

78.66.Hf

78.20.Jq (Electro-optical effects) 68.55.J- (Morphology of films)

曹敏, 门传玲, 朱德明, 田子傲, 安正华. In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications[J]. 中国物理B, 2013, 22(10): 107803-107803.

Cao Min (曹敏), Men Chuan-Ling (门传玲), Zhu De-Ming (朱德明), Tian Zi-Ao (田子傲), An Zheng-Hua (安正华). In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications[J]. Chin. Phys. B, 2013, 22(10): 107803-107803.

参考文献 39

[1]	Chen D S, Yang J, Zhou P H, Du H W, Shi J W, Yu Z S, Zhang Y H, Brian B and Ma Z Q 2013 Chin. Phys. B 22 018801
[2]	Sho S, Katsuhiko O, Yasuyuki I and TOkio N 2009 Solar Energy Mater. Solar Cell. 93 988
[3]	Sakurai T, Ishida N, Ishizuka S, Isiam M M, Kasai A, Matsubara K, Sakurai K, Yamada A, Akimoti K and Niki S 2008 Thin Solid Films 516 7036
[4]	Hariskos D, Powalla M, Chevaldonnet N, Lincot D, Chindler A S and Dimmler B 2001 Thin Solid Films 387 179
[5]	Contreras M A, Romero M J, To B, Hasoon F, Nonfi R, Ward S and Ramanathan K 2002 Thin Solid Films 403-404 204
[6]	Chung Y D, Cho D H, Choi H W, Lee K S, Ahn B J, Song J H and Kim J 2012 J. Kor. Phys. Soc. 61 1623
[7]	Men C L, Tian Z A, Shao Q P, Zhang H and An Z H 2012 Appl. Surf. Sci. 258 10195
[8]	Xavier M, Pantoja J E, Alessandro R and Ayodhya N T 2004 Solar Energy 77 831
[9]	Antonio L and Steven H 2003 Handbook of Photovoltaic Science and Engineering, 2nd edn. (England: John Wiley & Sons Ltd), Chapter 14
[10]	Li B, Feng L H, Wang Z, Zheng X, Zheng J G, Cai Y P, Zhang J Q, Li W, Wu L L, Lei Z and Zeng G G 2011 Chin. Phys. B 20 037103
[11]	Miguel A C, Manuel J R, Bobby and Hasoon F 2002 Thin Solid Films 403 204
[12]	Touskova J, Kindl D, Dobiasova L and Tousek J 1998 Solar Energy Mater. Solar Cells 53 177
[13]	Sasikala G, Dhnasekaran R and Subramanian C 1997 Thin Solid Films 302 71
[14]	Brunthaler G, Lang M, Forstner A, Giftge C, Schikora D, Fereira S, Sitter H and Lischka K 1994 J. Crystal Growth 138 559
[15]	Birkmire R W, McCandless B E and Shafarman W N 1988 Solar Energy 23 115
[16]	Chou H C and Ohatgi A R 1994 Electron. Mater. 23 31
[17]	Mathew S, Mukerjee P S and Vijayakumar K P 1995 Thin Solid Films 254 278
[18]	Zhang H, Ma X and Yang D 2003 Mater. Lett. 58 5
[19]	Xu C M, Sun Y, Zhou L, Li F Y, Zhang L, Xue Y M, Zhou Z Q and He Q 2006 Chin. J. Semicond. 23 2259
[20]	Takashi M, Takuya M, Hideyuki T, Yoshihiro H, Takayuki N, Yasuhiro H, Takashi U and Masatoshi K 2001 Solar Energy Mater. & Solar Cells 67 83
[21]	Raviprakash Y, BangeraaKasturi V and Shivakumara G G 2010 Curr. Appl. Phys. 10 193
[22]	Ferekides C, Marinksiy D and Morel D L 1997 Proceedings of the 26th IEEE Photovoltaic Specialists Conference, September 30-October 3, 1991, Anaheim, USA, p. 339
[23]	Durose K, Edwards P R and Halliday D P 1999 J. Crystal Growth 197 733
[24]	Shan Y Q, Dang P and Yu X Z 2009 Journal of Northeastern University 30 392
[25]	Li W Y, Cai X, Chen Q L and Zhou Z B 2005 Mater. Lett. 59 1
[26]	Tokio N 2005 Thin Solid Films 480-481 419
[27]	Kaur I, Pandya D K and Chopra K L 1980 Electrochem. Soc. 12 943
[28]	Elangovan E and Ramamurthi K 2005 Appl. Surf. Sci. 249 183
[29]	Sharama S N, Sharma R K, Sood K N and Singh S 2005 Mater. Chem. Phys. 93 368
[30]	Kim Y J, Kin Y T, Yang H J, Park J C, Han J I, Lee Y E and Kim H J 1997 Vac. Sci. Technol. A 15 1103
[31]	Subba R K, Pilkington R D and Hill A E 2001 Mater. Chem. Phys. 68 22
[32]	Atay F, Bilgin V, Akyuz I and Kose S 2003 Mater. Sci. Semicond. Proc. 6 197
[33]	Lee J 2005 Appl. Surf. Sci. 252 1398
[34]	Ravichandran K and Philominathan P 2009 Appl. Surf. Sci. 255 5736
[35]	Wang Z J, Song L J, Li S C, Lu Y M, Tian Y X, Liu J Y and Wang L Y 2006 Chin. Phys. 15 2710
[36]	Wang M D, Zhu D Y, Liu Y, Zhang L, Zheng C X, He Z H, Chen D H and Wen L S 2008 Chin. Phys. Lett. 25 743
[37]	Moon B, Lee J and Jung H 2006 Thin Solid Films 511 299
[38]	Green M A 1981 Solar Cells: Operating Principles, Technology, and System Applications (Englewood Cliffs: Prentice-Hall)
[39]	Peter W and Uli W 2005 Physics of Solar Cells: From Basic Principles to Advanced Concepts (Gmbh & Co. kGaA: Wiley-VCH Verlag) p. 1

In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications

In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications

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