The determination of the x value in doped Hg1-xCdxTe by transmission spectra

doi:10.1088/1674-1056/21/1/017804

中国物理B ›› 2012, Vol. 21 ›› Issue (1): 17804-017804.doi: 10.1088/1674-1056/21/1/017804

The determination of the x value in doped Hg_1-xCd_xTe by transmission spectra

越方禹¹, 李亚巍¹, 孙琳¹, 杨平雄¹, 褚君浩², 陈璐³

(1)Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; (2)Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, Ch; (3)Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

收稿日期:2011-05-04 修回日期:2011-05-20 出版日期:2012-01-15 发布日期:2012-01-20
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2007CB924901), the Shanghai Leading Academic Discipline Project, China (Grant No. B411), the National Natural Science Foundation of China (Grant Nos. 60906043, 60990312, and 6107

The determination of the x value in doped Hg_1-xCd_xTe by transmission spectra

Yue Fang-Yu(越方禹)^a)^†, Chen Lu(陈璐)^b), Li Ya-Wei(李亚巍)^a), Sun Lin(孙琳)^a), Yang Ping-Xiong(杨平雄)^a), and Chu Jun-Hao(褚君浩)^a)c)

^a Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China; ^b Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; ^c National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Received:2011-05-04 Revised:2011-05-20 Online:2012-01-15 Published:2012-01-20
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2007CB924901), the Shanghai Leading Academic Discipline Project, China (Grant No. B411), the National Natural Science Foundation of China (Grant Nos. 60906043, 60990312, and 6107

摘要/Abstract

摘要： Variable-temperature transmission/absorption spectra are measured on As-doped Hg_1-xCd_xTe grown by molecular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is similar to our previous report on V_textrmHg (unintentionally)-doped HgCdTe. By referring to the empirical formulas of E_g(x, T), the x value of the epilayer is calculated and its inconsistency between the extreme temperatures (e.g. 10 and 300 K) is discussed. The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge, and suggest that the x value (or E_g) in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible (e.g. 10 K), and not the commonly used temperatures of 77 or 300 K, when the transmission spectrum should be employed. This can give brief guidelines for fabricating HgCdTe-related devices.

关键词: intrinsic/extrinsic-doped HgCdTe, bandedge parameters, transmission spectra

Abstract: Variable-temperature transmission/absorption spectra are measured on As-doped Hg_1-xCd_xTe grown by molecular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is similar to our previous report on V_textrmHg (unintentionally)-doped HgCdTe. By referring to the empirical formulas of E_g(x, T), the x value of the epilayer is calculated and its inconsistency between the extreme temperatures (e.g. 10 and 300 K) is discussed. The results confirm the assumption of the effect of shallow levels on the shift of the absorption edge, and suggest that the x value (or E_g) in intrinsic/extrinsic-doped HgCdTe should be determined by referring to as low a temperature as possible (e.g. 10 K), and not the commonly used temperatures of 77 or 300 K, when the transmission spectrum should be employed. This can give brief guidelines for fabricating HgCdTe-related devices.

Key words: intrinsic/extrinsic-doped HgCdTe, bandedge parameters, transmission spectra

中图分类号: (III-V and II-VI semiconductors)

78.30.Fs

78.66.Hf (II-VI semiconductors) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

越方禹, 陈璐, 李亚巍, 孙琳, 杨平雄, 褚君浩. The determination of the x value in doped Hg_1-xCd_xTe by transmission spectra[J]. 中国物理B, 2012, 21(1): 17804-017804.

Yue Fang-Yu(越方禹), Chen Lu(陈璐), Li Ya-Wei(李亚巍), Sun Lin(孙琳), Yang Ping-Xiong(杨平雄), and Chu Jun-Hao(褚君浩) . The determination of the x value in doped Hg_1-xCd_xTe by transmission spectra[J]. Chin. Phys. B, 2012, 21(1): 17804-017804.

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The determination of the x value in doped Hg_1-xCd_xTe by transmission spectra

The determination of the x value in doped Hg_1-xCd_xTe by transmission spectra

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