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Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
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Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation[J]. 中国物理B, 2023, 32(1): 16701-016701. |
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Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Mao-Lin Zhang(张茂林), Li-Li Yang(杨莉莉), Shan Li(李山), Zu-Yong Yan(晏祖勇), Shao-Hui Zhang(张少辉), Dao-You Guo(郭道友), Pei-Gang Li(李培刚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response[J]. 中国物理B, 2022, 31(8): 88503-088503. |
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Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD[J]. 中国物理B, 2022, 31(3): 38103-038103. |
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Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film[J]. 中国物理B, 2021, 30(5): 57301-057301. |
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Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮). Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si[J]. 中国物理B, 2021, 30(11): 118101-118101. |
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徐庆君, 张士英, 刘斌, 李振华, 陶涛, 谢自力, 修向前, 陈敦军, 陈鹏, 韩平, 王科, 张荣, 郑有炓. Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys[J]. 中国物理B, 2020, 29(5): 58103-058103. |
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胡启昌, 丁凯. Magnesium incorporation efficiencies in MgxZn1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition[J]. 中国物理B, 2017, 26(6): 68104-068104. |
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许晟瑞, 赵颖, 蒋仁渊, 姜腾, 任泽阳, 张进成, 郝跃. Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition[J]. 中国物理B, 2017, 26(2): 27801-027801. |
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邢海英, 陈雨, 纪骋, 蒋盛翔, 苑梦尧, 郭志英, 李琨, 崔明启, 张国义. Role of vacancy-type defects in magnetism of GaMnN[J]. 中国物理B, 2016, 25(6): 67503-067503. |
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于淑珍, 董建荣, 孙玉润, 李奎龙, 曾徐路, 赵勇明, 杨辉. Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation[J]. 中国物理B, 2016, 25(3): 38101-038101. |
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郭峰, 汪薪生, 庄仕伟, 李国兴, 张宝林, 周本初. Nanodots and microwires of ZrO2 grown on LaAlO3 by photo-assisted metal-organic chemical vapor deposition[J]. 中国物理B, 2016, 25(2): 28103-028103. |
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林家勇, 裴艳丽, 卓毅, 陈梓敏, 胡锐钦, 蔡广烁, 王钢. High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer[J]. 中国物理B, 2016, 25(11): 118506-118506. |
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尚向军, 徐建星, 马奔, 陈泽升, 魏思航, 李密峰, 查国伟, 张立春, 喻颖, 倪海桥, 牛智川. Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots[J]. 中国物理B, 2016, 25(10): 107805-107805. |
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黄杰, 黎明, 赵倩, 顾雯雯, 刘纪美. Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications[J]. 中国物理B, 2015, 24(8): 87305-087305. |