中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2292-2296.doi: 10.1088/1674-1056/17/6/060

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Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

刘秉策1, 刘磁辉2, 付竹西2   

  1. (1)Department of Electron Science and Technology, University of Science and Technology of China, Hefei 230026, China; (2)Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:2007-06-08 修回日期:2008-01-28 出版日期:2008-06-20 发布日期:2008-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 50472009, 10474091 and 50532070).

Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

Liu Ci-Hui(刘磁辉)a)†, Liu Bing-Ce(刘秉策)b), and Fu Zhu-Xi(付竹西)a)   

  1. a Department of Physics, University of Science and Technology of China, Hefei 230026, China; b Department of Electron Science and Technology, University of Science and Technology of China, Hefei 230026, China
  • Received:2007-06-08 Revised:2008-01-28 Online:2008-06-20 Published:2008-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 50472009, 10474091 and 50532070).

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摘要： ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus voltage and temperature ($I-V-T$) characteristics, the deep-level transient spectroscopy (DLTS) and the photoluminescence (PL) spectra of the samples were measured. DLTS shows two deep-level centres of $E_1$ ($E_{\rm C}$--0.13$\pm $0.02\,eV) and $E_2$ ($E_{\rm C}$--0.43$\pm $0.05\,eV) in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at $E_{\rm C}$--0.13$\pm $0.01\,eV was also obtained from the $I-T$ characteristics. It was considered to be the same as $E_1$ obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of $E_1$ was varied when the total gas flow rate was changed.

关键词: MOCVD, ZnO/ Si heterostructure, PL spectra, deep-level emission

Abstract: ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus voltage and temperature ($I-V-T$) characteristics, the deep-level transient spectroscopy (DLTS) and the photoluminescence (PL) spectra of the samples were measured. DLTS shows two deep-level centres of $E_1$ ($E_{\rm C}$--0.13$\pm $0.02\,eV) and $E_2$ ($E_{\rm C}$--0.43$\pm $0.05 eV) in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at $E_{\rm C}$--0.13$\pm $0.01 eV was also obtained from the $I-T$ characteristics. It was considered to be the same as $E_1$ obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of $E_1$ was varied when the total gas flow rate was changed.

Key words: MOCVD, ZnO/ Si heterostructure, PL spectra, deep-level emission

中图分类号:  (II-VI semiconductors)

  • 71.55.Gs
73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ga (II-VI semiconductors) 78.55.Et (II-VI semiconductors) 78.66.Hf (II-VI semiconductors)