中国物理B ›› 2010, Vol. 19 ›› Issue (2): 27201-027201.doi: 10.1088/1674-1056/19/2/027201

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Current-voltage characteristics of lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composites

AlexA.Volinsky1, 孙俊赛2, 潘德安3, 张深根3, 田建军3, 乔利杰3   

  1. (1)Department of Mechanical Engineering, University of South Florida, Tampa FL 33620, USA; (2)Faculty of Materials and Metallurgical Engineering, Kunming University of Science and Technology, Kunming 650093, China; (3)School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
  • 收稿日期:2009-03-27 修回日期:2009-05-20 出版日期:2010-02-15 发布日期:2010-02-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 50572006, 50802008 and 50874010), the Natural Science Foundation of Beijing, China (Grant No. 2073026), the Program for New Century Excellent Talents in University (Grant No. 20060420152), and Scholars and Innovative Research Team in University (Grant No. 0509). Alex A. Volinsky would like to acknowledge support from NSF (Grant No. CMMI-0600266).

Current-voltage characteristics of lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composites

Pan De-An(潘德安)a)†, Zhang Shen-Gen(张深根)a), Tian Jian-Jun(田建军)a), Sun Jun-Sai(孙俊赛) b), Alex A. Volinskyc), and Qiao Li-Jie(乔利杰)a)   

  1. a School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China; b Faculty of Materials and Metallurgical Engineering, Kunming University of Science and Technology, Kunming 650093, China; c Department of Mechanical Engineering, University of South Florida, Tampa FL 33620, USA
  • Received:2009-03-27 Revised:2009-05-20 Online:2010-02-15 Published:2010-02-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 50572006, 50802008 and 50874010), the Natural Science Foundation of Beijing, China (Grant No. 2073026), the Program for New Century Excellent Talents in University (Grant No. 20060420152), and Scholars and Innovative Research Team in University (Grant No. 0509). Alex A. Volinsky would like to acknowledge support from NSF (Grant No. CMMI-0600266).

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摘要： Current--voltage measurements obtained from lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composite showed that a sinusoidal current applied to the copper coil wrapped around the hollow cylinder circumference induces voltage across the lead zirconate titanate layer thickness. The current--voltage coefficient and the maximum induced voltage in lead zirconate titanate at 1~kHz and resonance (60.1~kHz) frequencies increased linearly with the number of the coil turns and the applied current. The resonance frequency corresponds to the electromechanical resonance frequency. The current--voltage coefficient can be significantly improved by optimizing the magnetoelectric structure geometry and/or increasing the number of coil turns. Hollow cylindrical lead zirconate titanate/nickel structures can be potentially used as current sensors.

Abstract: Current--voltage measurements obtained from lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composite showed that a sinusoidal current applied to the copper coil wrapped around the hollow cylinder circumference induces voltage across the lead zirconate titanate layer thickness. The current--voltage coefficient and the maximum induced voltage in lead zirconate titanate at 1 kHz and resonance (60.1 kHz) frequencies increased linearly with the number of the coil turns and the applied current. The resonance frequency corresponds to the electromechanical resonance frequency. The current--voltage coefficient can be significantly improved by optimizing the magnetoelectric structure geometry and/or increasing the number of coil turns. Hollow cylindrical lead zirconate titanate/nickel structures can be potentially used as current sensors.

Key words: current--voltage coefficient, bilayered cylindrical composites, electromechanical resonance, current sensor

中图分类号:  (Defects and impurities: doping, implantation, distribution, concentration, etc.)

  • 68.55.Ln
78.66.Hf (II-VI semiconductors) 61.72.S- (Impurities in crystals) 61.72.Cc (Kinetics of defect formation and annealing) 81.20.Fw (Sol-gel processing, precipitation) 78.55.Et (II-VI semiconductors)