中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4536-4540.doi: 10.1088/1674-1056/18/10/073

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Effects of doping concentration on properties of Mn-doped ZnO thin films

高立, 张建民   

  1. College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China
  • 收稿日期:2009-03-03 修回日期:2009-03-26 出版日期:2009-10-20 发布日期:2009-10-20
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2004CB619302).

Effects of doping concentration on properties of Mn-doped ZnO thin films

Gao Li(高立) and Zhang Jian-Min(张建民)†   

  1. College of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China
  • Received:2009-03-03 Revised:2009-03-26 Online:2009-10-20 Published:2009-10-20
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No 2004CB619302).

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摘要： This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500~°C. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn_2p3 / 2 increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mn-doped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4~wt.% and 10~wt.% Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20~wt.% Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.

Abstract: This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500 °C. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn2p3/2 increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mn-doped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4 wt.% and 10 wt.% Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20 wt.% Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.

Key words: Mn-doped ZnO, radio frequency magnetron sputtering, x-ray photoelectron spectroscopy, photoluminescence

中图分类号:  (Defects and impurities: doping, implantation, distribution, concentration, etc.)

  • 68.55.Ln
61.72.uj (III-V and II-VI semiconductors) 78.55.Et (II-VI semiconductors) 78.66.Hf (II-VI semiconductors) 79.60.Dp (Adsorbed layers and thin films) 81.15.Cd (Deposition by sputtering)