White-light emission of ZnO nanoparticles prepared by sol–gel method

doi:10.1088/1674-1056/20/12/127102

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127102-127102.doi: 10.1088/1674-1056/20/12/127102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

White-light emission of ZnO nanoparticles prepared by sol–gel method

李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜

School of Physical Science, University of Jinan, Jinan 250022, China

收稿日期:2011-04-22 修回日期:2011-06-26 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the Natural Science Foundation of Shandong Province of China (Grant No. Y2007G14), the Science and Technology Development Projects of Shandong Province of China (Grant Nos. 2009GG2003028 and 2010G0020423), the Doctoral Foundation of University of Jinan, China (Grant No. XBS0845), the Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, China (Grant No. 2010L0101), and the Scientific Research Foundation of University of Jinan, China (Grant No. XKY1029).

White-light emission of ZnO nanoparticles prepared by sol–gel method

Li Shi-Shuai(李世帅), Zhang Zhong(张仲)^†, Hang Jin-Zhao(黄金昭), Feng Xiu-Peng(冯秀鹏), and Liu Ru-Xi(刘如喜)

School of Physical Science, University of Jinan, Jinan 250022, China

Received:2011-04-22 Revised:2011-06-26 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the Natural Science Foundation of Shandong Province of China (Grant No. Y2007G14), the Science and Technology Development Projects of Shandong Province of China (Grant Nos. 2009GG2003028 and 2010G0020423), the Doctoral Foundation of University of Jinan, China (Grant No. XBS0845), the Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, China (Grant No. 2010L0101), and the Scientific Research Foundation of University of Jinan, China (Grant No. XKY1029).

摘要/Abstract

摘要： In:ZnO nanoparticles are prepared by the sol-gel process. The ratios of In/(Zn+In) are 0%, 5%, 8%, 10%, and 15%, respectively. Crystal phase structures and optoelectronic properties of these samples are characterized and the chromaticity coordinates of different samples are also calculated in CIE-XYZ colour system. The results show that preferred growth direction of ZnO changes from (002) plane to (001) plane and interplanar distance becomes shorter. When the doping amount of In is 5%, Zn atoms are completely replaced by In atoms. The resistivities of the samples first decrease, then increase afterwards with the increase of the amount of In. With the increase of In, the ultraviolet emission is redshifted and new peaks occur at 465 nm, 535 nm, and 630 nm. The sample with 10% indium has white-light emission. The band structures of samples with 0% and 12.5% indium are investigated by the first principle method. The mechanism of white emission is discussed from the viewpoint of additional energy levels.

Abstract: In:ZnO nanoparticles are prepared by the sol-gel process. The ratios of In/(Zn+In) are 0%, 5%, 8%, 10%, and 15%, respectively. Crystal phase structures and optoelectronic properties of these samples are characterized and the chromaticity coordinates of different samples are also calculated in CIE-XYZ colour system. The results show that preferred growth direction of ZnO changes from (002) plane to (001) plane and interplanar distance becomes shorter. When the doping amount of In is 5%, Zn atoms are completely replaced by In atoms. The resistivities of the samples first decrease, then increase afterwards with the increase of the amount of In. With the increase of In, the ultraviolet emission is redshifted and new peaks occur at 465 nm, 535 nm, and 630 nm. The sample with 10% indium has white-light emission. The band structures of samples with 0% and 12.5% indium are investigated by the first principle method. The mechanism of white emission is discussed from the viewpoint of additional energy levels.

Key words: sol-gel resistivity, chromaticity coordinate white-light emitting, first principle

中图分类号: (II-VI semiconductors)

71.55.Gs

73.61.Ga (II-VI semiconductors) 78.66.Hf (II-VI semiconductors)

李世帅, 张仲, 黄金昭, 冯秀鹏, 刘如喜. White-light emission of ZnO nanoparticles prepared by sol–gel method[J]. 中国物理B, 2011, 20(12): 127102-127102.

Li Shi-Shuai(李世帅), Zhang Zhong(张仲), Hang Jin-Zhao(黄金昭), Feng Xiu-Peng(冯秀鹏), and Liu Ru-Xi(刘如喜) . White-light emission of ZnO nanoparticles prepared by sol–gel method[J]. Chin. Phys. B, 2011, 20(12): 127102-127102.

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White-light emission of ZnO nanoparticles prepared by sol–gel method

White-light emission of ZnO nanoparticles prepared by sol–gel method

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