Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 17302-017302.doi: 10.1088/1674-1056/22/1/017302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

High-power SiC MESFET using dual p-buffer layer for S-band power amplifier

邓小川, 孙鹤, 饶成元, 张波   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2012-05-18 修回日期:2012-06-20 出版日期:2012-12-01 发布日期:2012-12-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076072).

High-power SiC MESFET using dual p-buffer layer for S-band power amplifier

Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2012-05-18 Revised:2012-06-20 Online:2012-12-01 Published:2012-12-01
  • Contact: Deng Xiao-Chuan E-mail:xcdeng@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076072).

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摘要： Silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.

关键词: dual p-buffer layer, silicon carbide, MESFETs, electron confinement

Abstract: Silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications.

Key words: dual p-buffer layer, silicon carbide, MESFETs, electron confinement

中图分类号:  (Metal-semiconductor-metal structures)

  • 73.40.Sx