Parasitic bipolar amplification in single event transient and its temperature dependence

doi:10.1088/1674-1056/21/9/099401

中国物理B ›› 2012, Vol. 21 ›› Issue (9): 99401-099401.doi: 10.1088/1674-1056/21/9/099401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇下一篇

Parasitic bipolar amplification in single event transient and its temperature dependence

刘征, 陈书明, 陈建军, 秦军瑞, 刘蓉容

College of Computer, National University of Defense Technology, Changsha 410073, China

收稿日期:2012-02-27 修回日期:2012-04-26 出版日期:2012-08-01 发布日期:2012-08-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61076025, and 61006070) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20104307120006).

Parasitic bipolar amplification in single event transient and its temperature dependence

Liu Zheng (刘征), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Qin Jun-Rui (秦军瑞), Liu Rong-Rong (刘蓉容)

College of Computer, National University of Defense Technology, Changsha 410073, China

Received:2012-02-27 Revised:2012-04-26 Online:2012-08-01 Published:2012-08-01
Contact: Liu Zheng E-mail:zhliu1982@hotmail.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60836004, 61076025, and 61006070) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20104307120006).

摘要/Abstract

摘要： Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in single event transient (SET) current of single transistor and its temperature dependence are studied. We quantify the contributions of different current components in SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of single transistor.

关键词: single event transient, parasitic bipolar amplification, funnel-aided drift, temperature dependence

Abstract: Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in single event transient (SET) current of single transistor and its temperature dependence are studied. We quantify the contributions of different current components in SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of single transistor.

Key words: single event transient, parasitic bipolar amplification, funnel-aided drift, temperature dependence

中图分类号: (Radiation processes)

94.05.Dd

85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

刘征, 陈书明, 陈建军, 秦军瑞, 刘蓉容. Parasitic bipolar amplification in single event transient and its temperature dependence[J]. 中国物理B, 2012, 21(9): 99401-099401.

Liu Zheng (刘征), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Qin Jun-Rui (秦军瑞), Liu Rong-Rong (刘蓉容). Parasitic bipolar amplification in single event transient and its temperature dependence[J]. Chin. Phys. B, 2012, 21(9): 99401-099401.

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Parasitic bipolar amplification in single event transient and its temperature dependence

Parasitic bipolar amplification in single event transient and its temperature dependence

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