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Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
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Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure[J]. 中国物理B, 2022, 31(9): 98502-098502. |
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Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |
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Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Assessing the effect of hydrogen on the electronic properties of 4H-SiC[J]. 中国物理B, 2022, 31(5): 56108-056108. |
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Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film[J]. 中国物理B, 2022, 31(1): 14402-014402. |
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Ying-Ying Yang(杨莹莹), Pei Gong(龚裴), Wan-Duo Ma(马婉铎), Rui Hao(郝锐), and Xiao-Yong Fang(房晓勇). Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes[J]. 中国物理B, 2021, 30(6): 67803-067803. |
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Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Improved 4H-SiC UMOSFET with super-junction shield region[J]. 中国物理B, 2021, 30(5): 58502-058502. |
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Wan-Duo Ma(马婉铎), Ya-Lin Li(李亚林), Pei Gong(龚裴), Ya-Hui Jia(贾亚辉), and Xiao-Yong Fang(房晓勇). Conductance and dielectric properties of hydrogen and hydroxyl passivated SiCNWs[J]. 中国物理B, 2021, 30(10): 107801-107801. |
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温正欣, 张峰, 申占伟, 陈俊, 何亚伟, 闫果果, 刘兴昉, 赵万顺, 王雷, 孙国胜, 曾一平. Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. 中国物理B, 2019, 28(6): 68504-068504. |
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仲雪倩, 王珏, 王宝柱, 王珩宇, 郭清, 盛况. Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes[J]. 中国物理B, 2018, 27(8): 87102-087102. |
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叶鑫, 夏晓川, 梁红伟, 李卓, 张贺秋, 杜国同, 崔兴柱, 梁晓华. Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection[J]. 中国物理B, 2018, 27(8): 87304-087304. |
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王曦, 蒲红斌, 刘青, 安丽琪. Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile[J]. 中国物理B, 2018, 27(10): 108502-108502. |
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李文波, 李玲, 王方方, 郑柳, 夏经华, 秦福文, 王晓琳, 李永平, 刘瑞, 王德君, 潘艳, 杨霏. Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study[J]. 中国物理B, 2017, 26(3): 37104-037104. |
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王曦, 蒲红斌, 刘青, 陈春兰, 陈治明. Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base[J]. 中国物理B, 2017, 26(10): 108505-108505. |
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邓小川, 陈茜茜, 李诚瞻, 申华军, 张金平. Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers[J]. 中国物理B, 2016, 25(8): 87201-087201. |