中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97302-097302.doi: 10.1088/1674-1056/21/9/097302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor

张现军, 杨银堂, 段宝兴, 柴常春, 宋坤, 陈斌   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2012-01-03 修回日期:2012-03-23 出版日期:2012-08-01 发布日期:2012-08-01
  • 基金资助:
    Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant No. 51308030201).

Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal–semiconductor field-effect transistor

Zhang Xian-Jun (张现军), Yang Yin-Tang (杨银堂), Duan Bao-Xing (段宝兴), Chai Chang-Chun (柴常春), Song Kun (宋坤), Chen Bin (陈斌)   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2012-01-03 Revised:2012-03-23 Online:2012-08-01 Published:2012-08-01
  • Contact: Zhang Xian-Jun E-mail:xianjun_zhang@yahoo.com.cn
  • Supported by:
    Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant No. 51308030201).

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摘要： Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the DIBL effect. The calculated results reveal that the DMG structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor (SMGFET).

关键词: silicon carbide, metal-semiconductor contact, dual material gate

Abstract: Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the DIBL effect. The calculated results reveal that the DMG structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor (SMGFET).

Key words: silicon carbide, metal-semiconductor contact, dual material gate

中图分类号:  (Metal-to-metal contacts)

  • 73.40.Jn
85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)