中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97303-097303.doi: 10.1088/1674-1056/21/9/097303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Compatibility and optoelectronic of ZnSe nano crystalline thin film

Taj Muhammad Khana, Tayyaba BiBib   

  1. a National Institute of Laser and Optronics (NILOP), P.O. Nilore 45650, Islamabad, Pakistan;
    b Department of Chemistry, Peshawar University, P.O. Peshawar 45000, Pakistan
  • 收稿日期:2011-08-26 修回日期:2012-06-12 出版日期:2012-08-01 发布日期:2012-08-01

Compatibility and optoelectronic of ZnSe nano crystalline thin film

Taj Muhammad Khana, Tayyaba BiBib   

  1. a National Institute of Laser and Optronics (NILOP), P.O. Nilore 45650, Islamabad, Pakistan;
    b Department of Chemistry, Peshawar University, P.O. Peshawar 45000, Pakistan
  • Received:2011-08-26 Revised:2012-06-12 Online:2012-08-01 Published:2012-08-01
  • Contact: Taj Muhammad Khan E-mail:tajakashne@gmail.com

摘要: We report the room temperature synthesis of zinc selenide (ZnSe) nano crystalline thin film on quartz by using a relatively simple and low cost closed space sublimation process (CSSP). The compatibility of the prepared thin films for optoelectronic applications was assessed by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), Raman spectroscopy, photoluminescence, and Fourier transform infrared spectroscopy (FT-IR). The XRD confirmed that the films were polycrystalline with the preferential orientation along the (111) plane corresponding to the cubic phase (2θ = 27.28°). The AFM indicated that the ZnSe film presented a smooth and compact morphology with RMS roughness 19.86 nm. The longitudinal optical phonon modes were observed at 247 cm-1 and 490 cm-1 attributed to the cubic structured ZnSe. The Zn-Se stretching band was confirmed by the FT-IR. The microstructure and compositional analysis was made with the SEM. The grain size, dislocation density, and strain calculated were co-related. All these properties manifested a good quality, high stability, finely adhesive, and closely packed structured ZnSe thin film for optoelectronic applications.

关键词: thin film, Raman spectroscopy

Abstract: We report the room temperature synthesis of zinc selenide (ZnSe) nano crystalline thin film on quartz by using a relatively simple and low cost closed space sublimation process (CSSP). The compatibility of the prepared thin films for optoelectronic applications was assessed by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), Raman spectroscopy, photoluminescence, and Fourier transform infrared spectroscopy (FT-IR). The XRD confirmed that the films were polycrystalline with the preferential orientation along the (111) plane corresponding to the cubic phase (2θ = 27.28°). The AFM indicated that the ZnSe film presented a smooth and compact morphology with RMS roughness 19.86 nm. The longitudinal optical phonon modes were observed at 247 cm-1 and 490 cm-1 attributed to the cubic structured ZnSe. The Zn-Se stretching band was confirmed by the FT-IR. The microstructure and compositional analysis was made with the SEM. The grain size, dislocation density, and strain calculated were co-related. All these properties manifested a good quality, high stability, finely adhesive, and closely packed structured ZnSe thin film for optoelectronic applications.

Key words: thin film, Raman spectroscopy

中图分类号:  (II-VI semiconductors)

  • 73.61.Ga
74.25.nd (Raman and optical spectroscopy) 78.30.Fs (III-V and II-VI semiconductors)