[1] |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
[2] |
Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇). Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases[J]. 中国物理B, 2022, 31(8): 88101-088101. |
[3] |
Shen Tan(谭深), Yan Li(李彦), Hao-Shi Zhang(张浩石), Xiao-Wei Wang(王晓伟), and Jing Jin(金靖). Loss prediction of three-level amplified spontaneous emission sources in radiation environment[J]. 中国物理B, 2022, 31(6): 64211-064211. |
[4] |
Guo-Dong Xiong(熊国栋), Hui-Ping Zhu(朱慧平), Lei Wang(王磊), Bo Li(李博), Fa-Zhan Zhao(赵发展), and Zheng-Sheng Han(韩郑生). Evolution of optical properties and molecular structure of PCBM films under proton irradiation[J]. 中国物理B, 2022, 31(5): 57102-057102. |
[5] |
Xinchuang Zhang(张新创), Mei Wu(武玫), Bin Hou(侯斌), Xuerui Niu(牛雪锐), Hao Lu(芦浩), Fuchun Jia(贾富春), Meng Zhang(张濛), Jiale Du(杜佳乐), Ling Yang(杨凌), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment[J]. 中国物理B, 2022, 31(5): 57301-057301. |
[6] |
Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华). Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2022, 31(3): 36103-036103. |
[7] |
Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀). Radiation effects of 50-MeV protons on PNP bipolar junction transistors[J]. 中国物理B, 2022, 31(2): 28502-028502. |
[8] |
Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞). Lattice damage in InGaN induced by swift heavy ion irradiation[J]. 中国物理B, 2022, 31(10): 106103-106103. |
[9] |
Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华). Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor[J]. 中国物理B, 2022, 31(1): 17701-017701. |
[10] |
Xi-Kun Feng(冯希昆), Xiao-Feng Gu(顾晓峰), Qin-Ling Ma(马琴玲), Yan-Ni Yang(杨燕妮), and Hai-Lian Liang(梁海莲). Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN[J]. 中国物理B, 2021, 30(7): 78502-078502. |
[11] |
Rui Liu(刘锐), Yongli He(何勇礼), Shanshan Jiang(姜珊珊), Li Zhu(朱力), Chunsheng Chen(陈春生), Ying Zhu(祝影), and Qing Wan(万青). Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor[J]. 中国物理B, 2021, 30(5): 58102-058102. |
[12] |
Shijun Zhao(赵仕俊). Influence of temperature and alloying elements on the threshold displacement energies in concentrated Ni-Fe-Cr alloys[J]. 中国物理B, 2021, 30(5): 56111-056111. |
[13] |
Jianing Guo(郭佳宁), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生). Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress[J]. 中国物理B, 2021, 30(11): 118102-118102. |
[14] |
Jia-Ning Liu(刘嘉宁), Feng-Xiang Chen(陈凤翔), Wen Deng(邓文), Xue-Ling Yu(余雪玲), and Li-Sheng Wang(汪礼胜). Optically-controlled resistive switching effectsof CdS nanowire memtransistor[J]. 中国物理B, 2021, 30(11): 116105-116105. |
[15] |
田博博, 钟妮, 段纯刚. Recent advances, perspectives, and challenges inferroelectric synapses[J]. 中国物理B, 2020, 29(9): 97701-097701. |