中国物理B ›› 2021, Vol. 30 ›› Issue (5): 58102-058102.doi: 10.1088/1674-1056/abc163

所属专题: SPECIAL TOPIC — Physics in neuromorphic devices

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Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor

Rui Liu(刘锐), Yongli He(何勇礼), Shanshan Jiang(姜珊珊), Li Zhu(朱力), Chunsheng Chen(陈春生), Ying Zhu(祝影), and Qing Wan(万青)   

  1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
  • 收稿日期:2020-08-24 修回日期:2020-09-30 接受日期:2020-10-15 出版日期:2021-05-14 发布日期:2021-05-14
  • 通讯作者: Qing Wan E-mail:wanqing@nju.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674162 and 61834001) and the National Key R&D Program of China (Grant Nos. 2018YFA0305800 and 2019YFB2205400).

Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor

Rui Liu(刘锐), Yongli He(何勇礼), Shanshan Jiang(姜珊珊), Li Zhu(朱力), Chunsheng Chen(陈春生), Ying Zhu(祝影), and Qing Wan(万青)   

  1. School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
  • Received:2020-08-24 Revised:2020-09-30 Accepted:2020-10-15 Online:2021-05-14 Published:2021-05-14
  • Contact: Qing Wan E-mail:wanqing@nju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11674162 and 61834001) and the National Key R&D Program of China (Grant Nos. 2018YFA0305800 and 2019YFB2205400).

摘要: Emulation of synaptic function by ionic/electronic hybrid device is crucial for brain-like computing and neuromorphic systems. Electric-double-layer (EDL) transistors with proton conducting electrolytes as the gate dielectrics provide a prospective approach for such application. Here, artificial synapses based on indium-tungsten-oxide (IWO)-based EDL transistors are proposed, and some important synaptic functions (excitatory post-synaptic current, paired-pulse facilitation, filtering) are emulated. Two types of spike-timing-dependent plasticity (Hebbian STDP and anti-Hebbian STDP) learning rules and multistore memory (sensory memory, short-term memory, and long-term memory) are also mimicked. At last, classical conditioning is successfully demonstrated. Our results indicate that IWO-based neuromorphic transistors are interesting for neuromorphic applications.

关键词: neuromorphic transistors, synaptic plasticity, oxide-based semiconductors, classical conditioning

Abstract: Emulation of synaptic function by ionic/electronic hybrid device is crucial for brain-like computing and neuromorphic systems. Electric-double-layer (EDL) transistors with proton conducting electrolytes as the gate dielectrics provide a prospective approach for such application. Here, artificial synapses based on indium-tungsten-oxide (IWO)-based EDL transistors are proposed, and some important synaptic functions (excitatory post-synaptic current, paired-pulse facilitation, filtering) are emulated. Two types of spike-timing-dependent plasticity (Hebbian STDP and anti-Hebbian STDP) learning rules and multistore memory (sensory memory, short-term memory, and long-term memory) are also mimicked. At last, classical conditioning is successfully demonstrated. Our results indicate that IWO-based neuromorphic transistors are interesting for neuromorphic applications.

Key words: neuromorphic transistors, synaptic plasticity, oxide-based semiconductors, classical conditioning

中图分类号:  (Amorphous semiconductors)

  • 81.05.Gc
85.30.Tv (Field effect devices) 87.19.lg (Synapses: chemical and electrical (gap junctions))