Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film

doi:10.1088/1674-1056/20/7/077803

中国物理B ›› 2011, Vol. 20 ›› Issue (7): 77803-077803.doi: 10.1088/1674-1056/20/7/077803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film

张波, 侯延冰, 滕枫, 娄志东, 刘小君, 胡兵, 武文彬

Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China

收稿日期:2011-01-05 修回日期:2011-02-16 出版日期:2011-07-15 发布日期:2011-07-15

Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film

Zhang Bo (张波), Hou Yan-Bing (侯延冰), Teng Feng (滕枫), Lou Zhi-Dong (娄志东), Liu Xiao-Jun (刘小君), Hu Bing (胡兵), Wu Wen-Bin (武文彬)

Key Laboratory of Luminescence and Optical Information of Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China

Received:2011-01-05 Revised:2011-02-16 Online:2011-07-15 Published:2011-07-15

摘要/Abstract

摘要： We investigate the amplified spontaneous emission (ASE) from an Ag-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with different film thicknesses. The ASE characteristics of Ag-backed MEH-PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.

Abstract: We investigate the amplified spontaneous emission (ASE) from an Ag-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) film with different film thicknesses. The ASE characteristics of Ag-backed MEH-PPV films with different thicknesses show that increasing the film thickness can reduce the influence of the Ag cladding. The threshold, the gain, and the loss of the device with a thickness of 170 nm are comparable to those of a metal-free device. The lasing threshold of this device is about 7.5 times that of a metal-free device. Our findings demonstrate that Ag-backed MEH-PPV film with an appropriate thickness can still be a good polymer gain material for the fabrication of solid-state lasers.

Key words: polymer semiconductor, amplified spontaneous emission, metal-backed film

中图分类号: (Stimulated emission)

78.45.+h

42.70.-a (Optical materials) 78.66.-w (Optical properties of specific thin films)

张波, 侯延冰, 滕枫, 娄志东, 刘小君, 胡兵, 武文彬. Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film[J]. 中国物理B, 2011, 20(7): 77803-077803.

Zhang Bo (张波), Hou Yan-Bing (侯延冰), Teng Feng (滕枫), Lou Zhi-Dong (娄志东), Liu Xiao-Jun (刘小君), Hu Bing (胡兵), Wu Wen-Bin (武文彬). Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film[J]. Chin. Phys. B, 2011, 20(7): 77803-077803.

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Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film

Amplified spontaneous emission from metal-backed poly[2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] film

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