Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

doi:10.1088/1674-1056/20/7/077802

中国物理B ›› 2011, Vol. 20 ›› Issue (7): 77802-077802.doi: 10.1088/1674-1056/20/7/077802

Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

侯国付, 耿新华, 张晓丹, 孙建, 张建军, 赵颖

Institute of Photo-electronics, Nankai University, Tianjin 300071, China

收稿日期:2010-09-23 修回日期:2011-02-11 出版日期:2011-07-15 发布日期:2011-07-15

Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

Hou Guo-Fu(侯国付)^†, Geng Xin-Hua(耿新华), Zhang Xiao-Dan(张晓丹), Sun Jian(孙建), Zhang Jian-Jun(张建军), and Zhao Ying(赵颖)

Institute of Photo-electronics, Nankai University, Tianjin 300071, China

Received:2010-09-23 Revised:2011-02-11 Online:2011-07-15 Published:2011-07-15

摘要/Abstract

摘要： A series of hydrogenated silicon thin films with varying silane concentrations have been deposited by using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The deposition process and the silicon thin films are studied by using optical emission spectroscopy (OES) and Fourier transfer infrared (FTIR) spectroscopy, respectively. The results show that when the silane concentration changes from 10% to 1%, the peak frequency of the Si—H stretching mode shifts from 2000 cm^{- 1} to 2100 cm^{- 1}, while the peak frequency of the Si—H wagging—rocking mode shifts from 650 cm^{- 1} to 620 cm^{- 1}. At the same time the SiH^*/H_α intensity ratio in the plasma decreases gradually. The evolution of the infrared spectra and the optical emission spectra demonstrates a morphological phase transition from amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). The structural evolution and the μc-Si:H formation have been analyzed based on the variation of H_α and SiH^* intensities in the plasma. The role of oxygen impurity during the plasma process and in the silicon films is also discussed in this study.

关键词: Fourier transfer infrared spectroscopy, optical emission spectroscopy, Si—H bonding configuration, oxygen impurity

Abstract: A series of hydrogenated silicon thin films with varying silane concentrations have been deposited by using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The deposition process and the silicon thin films are studied by using optical emission spectroscopy (OES) and Fourier transfer infrared (FTIR) spectroscopy, respectively. The results show that when the silane concentration changes from 10% to 1%, the peak frequency of the Si—H stretching mode shifts from 2000 cm^{- 1} to 2100 cm^{- 1}, while the peak frequency of the Si—H wagging—rocking mode shifts from 650 cm^{- 1} to 620 cm^{- 1}. At the same time the SiH^*/H_α intensity ratio in the plasma decreases gradually. The evolution of the infrared spectra and the optical emission spectra demonstrates a morphological phase transition from amorphous silicon (a-Si:H) to microcrystalline silicon (μc-Si:H). The structural evolution and the μc-Si:H formation have been analyzed based on the variation of H_$\alpha$ and SiH^* intensities in the plasma. The role of oxygen impurity during the plasma process and in the silicon films is also discussed in this study.

Key words: Fourier transfer infrared spectroscopy, optical emission spectroscopy, Si—H bonding configuration, oxygen impurity

中图分类号: (Infrared and Raman spectra)

78.30.-j

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 68.55.A- (Nucleation and growth) 73.63.Bd (Nanocrystalline materials)

侯国付, 耿新华, 张晓丹, 孙建, 张建军, 赵颖. Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD[J]. 中国物理B, 2011, 20(7): 77802-077802.

Hou Guo-Fu(侯国付), Geng Xin-Hua(耿新华), Zhang Xiao-Dan(张晓丹), Sun Jian(孙建), Zhang Jian-Jun(张建军), and Zhao Ying(赵颖). Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD[J]. Chin. Phys. B, 2011, 20(7): 77802-077802.

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Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

Evolution of infrared spectra and optical emission spectra in hydrogenated silicon thin films prepared by VHF-PECVD

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