中国物理B ›› 2013, Vol. 22 ›› Issue (8): 86803-086803.doi: 10.1088/1674-1056/22/8/086803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

王敏帅, 黄晓菁   

  1. Department of Physics, School of Science, Jimei University, Xiamen 361021, China
  • 收稿日期:2013-01-13 修回日期:2013-04-01 出版日期:2013-06-27 发布日期:2013-06-27
  • 基金资助:
    Project supported by the Natural Science Foundation of Fujian Province, China (Grant No. 2012J01280).

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

Wang Min-Shuai (王敏帅), Huang Xiao-Jing (黄晓菁)   

  1. Department of Physics, School of Science, Jimei University, Xiamen 361021, China
  • Received:2013-01-13 Revised:2013-04-01 Online:2013-06-27 Published:2013-06-27
  • Contact: Huang Xiao-Jing E-mail:xjhuang@jmu.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Fujian Province, China (Grant No. 2012J01280).

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摘要： We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

关键词: V-shaped pits, light-extraction efficiency, forward voltage

Abstract: We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

Key words: V-shaped pits, light-extraction efficiency, forward voltage

中图分类号:  (Defects and impurities: doping, implantation, distribution, concentration, etc.)

  • 68.55.Ln
71.55.Eq (III-V semiconductors) 78.45.+h (Stimulated emission) 78.60.Lc (Optically stimulated luminescence)